Erratum: Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals [J. Appl. Phys. 86, 364 (1999)]

Krustok, J.; Schön, J. H.; Collan, H.; Yakushev, M. V.; Mädasson, J.; Bücher, E.

doi:10.1063/1.1375829

Cited by 26 publications

(40 citation statements)

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“…A typical PL spectrum recorded at 10 K is shown in figure 5. Photoluminescence spectra of CuInS 2 reported in earlier studies are essentially similar, although the sensitivity of our set-up is higher [46][47][48][49][50][51][52][53][54][55]. In the PL spectra, families of peaks are found which should not be regarded as experimental noise.…”

Section: Raman Spectroscopy and Photoluminescencementioning

confidence: 56%

Spray-deposited CuInS₂solar cells

Goossens

Hofhuis

2008

Nanotechnology

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Spray deposition of CuInS 2 offers an attractive route towards industrial production of thin-film solar cells. With spray deposition it is possible to make nanocomposites of n-type TiO 2 and p-type CuInS 2 . Upon application of an In 2 S 3 buffer layer, solar cells can be made with efficiencies of ∼7%, being comparable to that of amorphous silicon. Rapid thermal annealing is not involved in the production of these solar cells. In order to further improve the performance, the concentration of electronic defect states in the bandgap must be reduced. Towards this end a detailed study has been undertaken to elucidate the role of associated point defects in the recombination of electron-hole pairs. Especially with transient absorption spectroscopy it is possible to make an accurate assessment of the fundamental electronic processes that are involved. We find electronic states in the bandgap related to the presence of anti-site defects. In addition, indium vacancies are also involved. State-to-state recombination occurs, indicating that the involved defects are associated. An electronic state located at 1.1 eV above the valence band, which is related to indium on a copper position, has a lifetime of about 20 μs at room temperature. The lower lying states related to copper on indium positions, and indium vacancies, are populated from this 1.1 eV state.

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Section: Raman Spectroscopy and Photoluminescencementioning

confidence: 56%

Spray-deposited CuInS₂solar cells

Goossens

Hofhuis

2008

Nanotechnology

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“…As is the case in other gallium chalcogenides, we believe that these pairs are due to defects in the crystal. Since the calculations on the formation energy of the defect pairs suggest that formation energy of a defect pair may be lower than the sum of two individual defects formation energies, concentration of closely spaced paired defects could easily dominate in crystals such as GaS 0.5 Se 0.5 [18]. On the other hand, the intensity of the peak energy maximum increases with increasing excitation intensity which is also characteristic of donor-acceptor pair recombination.…”

Section: Resultsmentioning

confidence: 99%

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Aydınlı

Gasanly

Goksen

2001

Materials Research Bulletin

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Photoluminescence (PL) spectra of GaS 0.5 Se 0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T ϭ 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10 Ϫ3 to 15.9 W cm Ϫ2 . These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located at 0.029 and 0.040 eV below the bottom of the conduction band to deep acceptor levels located 0.185 and 0.356 eV above the top of the valence band are suggested to be responsible for the observed A-and B-bands in the PL spectra, respectively. A simple energy level diagram explaining the recombination process is proposed.

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“…Photoluminescence (PL) studies on CuGaSe 2 found donor-acceptor-pair (DAP) transitions between 1.0 and 1.3 eV. 12,13 But estimations of the defect levels in these studies are based on calculations rather than measuring the activation energy directly. In Ref.…”

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confidence: 99%

“…In Ref. 12, the distance of next-nearest donor-acceptor pairs for different lattice positions was used, whereas in Ref. 13, the deep levels were calculated from the energetic position of bound excitons.…”

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Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

Spindler

Regesch

Siebentritt

2016

Applied Physics Letters

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Recent defect calculations suggest that the open circuit voltage of CuGaSe2 solar cells can be limited by deep intrinsic electron traps by GaCu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

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Erratum: Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals [J. Appl. Phys. 86, 364 (1999)]

Cited by 26 publications

References 1 publication

Spray-deposited CuInS₂solar cells

Spray-deposited CuInS₂solar cells

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

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Erratum: Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals [J. Appl. Phys. 86, 364 (1999)]

Cited by 26 publications

References 1 publication

Spray-deposited CuInS2solar cells

Spray-deposited CuInS2solar cells

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

Contact Info

Product

Resources

About

Spray-deposited CuInS₂solar cells

Spray-deposited CuInS₂solar cells