2009
DOI: 10.1016/j.seppur.2009.06.014
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Erratum to “A novel CdS/S-TiO2 nanotubes photocatalyst with high visible light activity” [Sep. Purif. Technol. 66 (2) (2009) 417–421]

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Cited by 44 publications
(63 citation statements)
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“…4). The 1074 cm -1 band arises from P-O stretching vibrations; the 966 cm -1 band, from W=O stretching vibrations [44]. Thus, the Keggin structure of the HPA persists after the deposition of the acid onto the titanium dioxide surface.…”
Section: Resultsmentioning
confidence: 97%
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“…4). The 1074 cm -1 band arises from P-O stretching vibrations; the 966 cm -1 band, from W=O stretching vibrations [44]. Thus, the Keggin structure of the HPA persists after the deposition of the acid onto the titanium dioxide surface.…”
Section: Resultsmentioning
confidence: 97%
“…In the first method, an HPA is introduced at some TiO 2 synthesis stage [39,40]; in the second, an HPA as a colloid, suspension, or film is adsorbed onto off the shelf titanium dioxide [38,41]. HPAs were anchored to a TiO 2 film by heat treating the latter at 300°С [42], 350°С [43], and 400°С [44]. In all cases, HPA deposition accelerated the photochemical oxi dation reaction.…”
mentioning
confidence: 99%
“…Among these materials, nanocrystalline CdS is a direct band-gap semiconductor material with a reasonable band-gap of 2.4 eV which can effectively absorb the visible light. To date, CdS has been decorated on the TiO 2 system electrodes by different methods, such as electrochemical deposition [17][18][19][20] and sequential-chemical bath deposition (S-CBD) [21][22][23][24]. Recently, Zhang et al [25] reported that uniform CdS/TiO 2 nanotube arrays could be fabricated by the method of successive ion layer adsorption and reaction (SILAR).…”
Section: Introductionmentioning
confidence: 99%
“…Various semiconductor materials have been investigated as solar water splitting for hydrogen energy conversion such as TiO 2 [1], GaInP [2], WO 3 [3], BiVO 4 [4] and NaTaO 3 [5]. The semiconductor for solar water splitting should have the conduction and the valence band edge positions straddled H + /H 2 and O 2 /H 2 O redox potentials.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore it was considered that connection of GaN particles can be improved by adding LiNH 2 into GaN particulate film electrode. Another method is a heat-treatment of GaN particulate thin film electrode with TiCl 4 . It has been reported that the connection of particles was improved by this method [23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%