Error-free 10 Gbit/s transmission using individual Fabry-Perot modes of low-noise quantum-dot laser

Gubenko, A.; Krestnikov, I. L.; Livshtis, D.; Mikhrin, S.; Kovsh, A. R.; West, Lawrence C.; Bornholdt, C.; Grote, N.; Zhukov, A. E.

doi:10.1049/el:20072953

Cited by 64 publications

(37 citation statements)

References 5 publications

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“…Due to strong spectral hole burning, the QD material has a much lower mode partition noise, and a single cavity multiwavelength Fabry-Perot QD laser has been reported. 15 Our external cavity QD SOA/silicon laser decouples the gain medium and cavity feedback, which provides further flexibility in the lasing wavelength and channel spacing selection.…”

Section: Discussionmentioning

confidence: 99%

“…A conventional indium phosphide (InP) quantum well-based gain medium could be used, 13 but an InAs/GaAs QD gain medium gives unprecedented advantages, such as ultralow temperature dependence, 14 low-noise single cavity multiwavelength lasing, 15 and a wide tuning range. 16 The fabrication and optical properties of silicon QDs were also reported, including optical amplification [17][18][19] and all-optical modulation, 20 which are promising for integration with silicon photonics devices.…”

Section: Gain Medium Integrationmentioning

confidence: 99%

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Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

Yang

Zhang

et al. 2015

Opt. Eng

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Abstract. We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip. The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50-dB side-mode suppression ratio. We also demonstrated open eye diagrams at 10 and 40 Gb∕s. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Discussionmentioning

confidence: 99%

Section: Gain Medium Integrationmentioning

confidence: 99%

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

Yang

Zhang

et al. 2015

Opt. Eng

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“…Quantum dot lasers, based on III-V compound semiconductor quantum dots, are capable of producing many narrow-spectrum peaks over an entire wavelength band that can be used for WDM applications [Livshits et al 2010]. Coupled with broadband quantum dot semiconductor optical amplifiers, these lasers are capable of producing many wavelength channels, with low relative intensity noise, that may be modulated, transmitted, and received with error-free performance [Gubenko et al 2007]. This approach alleviates packaging complexity of the silicon chip, while simultaneously minimizing the overall cost and power consumption.…”

Section: Switchesmentioning

confidence: 99%

Photonic network-on-chip architectures using multilayer deposited silicon materials for high-performance chip multiprocessors

Biberman

Preston

Hendry

et al. 2011

J. Emerg. Technol. Comput. Syst.

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Integrated photonics has been slated as a revolutionary technology with the potential to mitigate the many challenges associated with on-and off-chip electrical interconnection networks. To date, all proposed chipscale photonic interconnects have been based on the crystalline silicon platform for CMOS-compatible fabrication. However, maintaining CMOS compatibility does not preclude the use of other CMOS-compatible silicon materials such as silicon nitride and polycrystalline silicon. In this work, we investigate utilizing devices based on these deposited materials to design photonic networks with multiple layers of photonic devices. We apply rigorous device optimization and insertion loss analysis on various network architectures, demonstrating that multilayer photonic networks can exhibit dramatically lower total insertion loss, enabling unprecedented bandwidth scalability. We show that significant improvements in waveguide propagation and waveguide crossing insertion losses resulting from using these materials enables the realization of topologies that were previously not feasible using only the single-layer crystalline silicon approaches.

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“…It is expected that the QD-CML will emerge as an important light source and will have applications as a compact optical frequency comb generator in photonic networks, bioimaging, etc (Gubenko et al 2007). The single-and discrete-mode selections of the QD-CML are important techniques for photonic communications.…”

Section: Wwwintechopencommentioning

confidence: 99%

Quantum Dot Photonic Devices and Their Material Fabrications

Yamamoto¹,

Sotobayashi²

2010

Advances in Optical and Photonic Devices

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Error-free 10 Gbit/s transmission using individual Fabry-Perot modes of low-noise quantum-dot laser

Cited by 64 publications

References 5 publications

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

Photonic network-on-chip architectures using multilayer deposited silicon materials for high-performance chip multiprocessors

Quantum Dot Photonic Devices and Their Material Fabrications

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