ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization

Abstract

Hall measurements on selectively doped InSb heterostructures grown by molecular beam epitaxy on GaAs (001) Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices Appl.Successful growth of ErSb(OO1) single crystal layers on GaSb(OO1) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4X4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by-monolayer growth and continuity of the Sb sublattice at the ErSb/GaSb interface. The ErSb has a low room temperature resistivity equal to 30 PQ cm but may be used as a metallic reflector only for wavelengths greater than 2.4 pm. The overgrowth of GaSb on ErSb leads to mirrorlike surfaces but the overlayers contain symmetry-related defects. On the contrary, nearly perfect GaSb overlayers were grown on [ErSb,GaSb] superlattices which exhibit metallic behavior.

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

“…Guivarch et al [9][10][11][12] investigated a variety of these types of materials including antimonide-based materials such as growth of ErSb and YbSb 2 on GaSb as well as phosphide-based ErP and ErPSb on InP. Like ErAs, these materials were found to grow epitaxially producing high-quality material.…”

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

“…Growth of epitaxial complete layers of ErSb on GaSb by molecular beam epitaxy ͑MBE͒ has previously been demonstrated. 10 In this letter we examine the growth regime prior to the formation of a complete film. In this regime the ErSb spontaneously forms nanometer-sized particles similar to ErAs on GaAs 11 and InGaAs.…”

“…In addition to the measured data, a calculation of the hole concentration in GaSb is shown. This calculation assumes that the Fermi level was pinned at the published bulk Schottky barrier height between GaSb and ErSb of 500 meV below the conduction band 10 and assumes a density of states based on the GaSb effective mass coefficients of 0.25 for the heavy hole and 0.05 for the light hole. As the layers of ErSb particles are moved closer together, the hole concentration is reduced and it approaches the calculation.…”

Molecular beam epitaxy of ScxEr1−xSb on InAs(100)

“…In an attempt to find a stable RE-V contact to GaSb, Guivarc'h et al [16] grew single crystalline ErSb on GaSb using molecular beam epitaxy (MBE). Recently, Hanson et al [17,18] investigated the potential application of the ErSb nanoparticles embedded in the GaSb matrix to sub-picosecond range photoconducting devices, which also demonstrated the thermodynamic stability of ErSb in GaSb.…”