No abstract

This paper deals with the growth by molecular beam epitaxy of semimetallic (rare-earth group V element) compounds on III-V semiconductors. Results are presented, first on the Er-Ga-As and Er-Ga-Sb ternary phase diagrams, second on the lattice-mismatched ErAs/GaAs (δa ≈ +1.6%), YbAs/GaAs (δa/a = +0.8%), and ErSb/GaSb (δa/a ≈ +0.2%) heterostructures, and third on the lattice-matched Sc0.3Er0.7As/GaAs and Sc0.2Yb0.8As/GaAs systems (δa/a < 0.05%). Finally the growth of YbSb2 on GaSb(001) is reported. The studies made in situ by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron diffraction and ex situ by x-ray diffraction, transmission electron microscopy, He+ Rutherford backscattering, and photoelectron spectroscopy are presented. We discuss the atomic registry of the epitaxial layers with respect to the substrates, the appearance of a mosaic effect in lattice-mismatched structures, and the optical and electrical properties of the semimetallic films. The problems encountered for III-V overgrowth on these compounds (lack of wetting and symmetry-related defects) are commented on, and we underline the interest of compounds as YbSb2 which avoid the appearance of inversion defects in the GaSb overlayers.

No abstract

Re~u le 12 juin 1980, revise le 22 aofit, accepte le 26 septembre 1980) Résumé. 2014 On étudie la mobilité à faible champ dans un super-réseau à base de semiconducteurs. Dans le cas de la diffusion par les phonons acoustiques, on obtient des formules analytiques. La discussion des résultats montre que la règle de conservation des k doit être entourée de précautions dans un tel système (processus Umklapp). Abstract. 2014 The near equilibrium mobility tensor in a one-dimensional superlattice is studied. Analytical formulae are given for acoustical phonon scattering. Discussion of the results shows that the k conservation rule must be carefully handled (U-processes).

Hall measurements on selectively doped InSb heterostructures grown by molecular beam epitaxy on GaAs (001) Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices Appl.Successful growth of ErSb(OO1) single crystal layers on GaSb(OO1) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4X4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by-monolayer growth and continuity of the Sb sublattice at the ErSb/GaSb interface. The ErSb has a low room temperature resistivity equal to 30 PQ cm but may be used as a metallic reflector only for wavelengths greater than 2.4 pm. The overgrowth of GaSb on ErSb leads to mirrorlike surfaces but the overlayers contain symmetry-related defects. On the contrary, nearly perfect GaSb overlayers were grown on [ErSb,GaSb] superlattices which exhibit metallic behavior.