Solid state phase equilibria in the Er-Ga-As system

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

“…Specifically, ScAs is also a semimetal with a similar band structure to the widely studied ErAs [6][7][8]. The solubility limit of Sc in GaAs is estimated to be on the order of 10 17 cm À 3 [9], which is similar to that of Er [10,11]. Sc 0.32 Er 0.68 As films have been grown lattice matched on (0 0 1) GaAs [5].…”

“…Table 1. Since the solubility limits of Sc and Er in GaAs are on the order of 10 17 cm À 3 [9][10][11], which corresponds to a volume concentration of only 0.0005%, we can assume that the amounts of Sc and Er been contained in the samples here are well beyond their solubility limits in InGaAs. This agrees with our cross-sectional scanning transmission electron microscopy (STEM) studies, from which the existence of nanoparticles have been observed at relatively low ScAs% and ErAs% of 0.66% and 0.2%, respectively, although the formation of nanoparticles may occur at even lower concentrations.…”

Photoemission forward scattering from ErAs(100)/GaAs(100)

“…ErAs(100) can be grown epitaxially on GaAs(100) surfaces [3], and the ErAs(100) thin film has been found to be thermodynamically stable in contact with GaAs [4]. The interface between a cubic rock salt structure (the rare earth monopnictides) and the Würtzite structure of the III -V semiconductors presents an example of epitaxial growth where the overlayer structure needs not adopt the crystal structure of the substrate.…”

Isothermal section of the Er–Cu–Ga ternary system at 973K

“…Er 5 Ga 3 , Er 3 Ga 2 , ErGa, ErGa 2 and ErGa 3 exhibit significant extensions into the ternary domain by substitution of Ga by Cu, up to the compositions Er 5 Cu 0.60 Ga 2.40 , Er 3 Cu 0.24 Ga 1.76 , ErCu 0.10 Ga 0.90 , ErCu 0.30 Ga 1.70 and ErCu 0.35 Ga 2.65 , respectively, whereas Er 3 Ga 5 does not show any significant solubility of Cu. Two crystal structures are available in literature for the Er 5 Ga 3 phase, a usually admitted hexagonal Mn 5 Si 3 -type [9,12,17,18] and a tetragonal Ba 5 Si 3 -type [19]. The latter reference indicates a slow polymorphic transformation from the hexagonal to the tetragonal structure during the annealing at 800 • C of an arc-melted sample.…”