Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

Fung, Wayne Y.; Chen, Lin; Lü, Wei

doi:10.1063/1.3633347

Cited by 34 publications

(21 citation statements)

References 19 publications

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“…Tunnel diodes function as series connections between pn-junction segments with different band gaps for absorbing different parts of the solar spectrum [18]. To date, NW tunnel diodes have been demonstrated using combinations of binary materials with suggested application in solar cells and electronic devices such as tunneling SRAMs and tunnel FETs [12,[19][20][21][22][23][24]. However, NW tunnel diodes with material combinations optimal for solar energy harvesting have not been reported.…”

Section: Introductionmentioning

confidence: 99%

InP/GaInP nanowire tunnel diodes

et al. 2018

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Semiconductor nanowire solar cells with single p-n junction have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even higher efficiency, for which a key step towards realizing such a device is the fabrication of tunnel (Esaki) diodes within nanowires with correct diameter, pitch, and material combination for maximized efficiency. We have fabricated, characterized and compared the electrical characteristics and material properties of InP/GaInP and GaInP/InP nanowire tunnel diodes with band gap combinations corresponding to high efficiency solar energy harvesting. Four different configurations with respect to material composition and doping were investigated. The nanowire arrays were grown with Metal Organic Vapor Phase Epitaxy from Au particles defined by use of nano imprint lithography, metal evaporation and lift-off. Electrical measurements show that the NWs behave as tunnel diodes in both InP (bottom)/GaInP (top) and GaInP (bottom)/InP (top) configurations, exhibiting a maximum peak current density of 25 A/cm 2 , and maximum peak to valley current ratio of 2.5 at room temperature. The realization of NW tunnel diodes in both InP/GaInP and GaInP/InP configurations open up an opportunity for NW tandem solar cells independent of the growth order of the different materials, opening up for flexibility regarding dopant incorporation polarity.

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Section: Introductionmentioning

confidence: 99%

InP/GaInP nanowire tunnel diodes

et al. 2018

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“…Furthermore, negative differential resistance (NDR) has also been reported in 2D-material-based systems (such as graphene/h-BN/graphene) including TMD-based (e.g., molybdenum disulfide or tungsten diselenide) heterostructure devices 6 , 11 – 15 . NDR, one of the most interesting quantum electronic tunneling transport phenomena, has found applications in high-frequency oscillators, frequency multipliers, and logic gates 16 , 17 . Although historically observed in a degenerate doped solid-state Esaki diodes via inter-band tunneling, NDR has also been realized in double quantum well heterostructures through resonant and off-resonant tunneling with an improved peak-to-valley ratio (PVR) 18 , 19 .…”

Section: Introductionmentioning

confidence: 99%

Observation of negative differential resistance in mesoscopic graphene oxide devices

Rathi

Lee

Kang

et al. 2018

Sci Rep

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The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators.

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“…The enormous interest towards these systems has been originally motivated by their unique properties, such as ease of processing, compatibility with existent Si technology, electronic and optical features that can be tuned by size, chemical composition, and geometry of Si/Ge interface. Recently, important advances in modeling, synthesis, and device engineering [15][16][17][18] have enabled the fabrication of SiGe core-shell devices with improved performance and reproducibility. Following we show that by playing with type II Si/Ge band offset 19,20 and with the impurity location in the wire, a remarkable modulation of the low energy optical peaks can be achieved.…”

mentioning

confidence: 99%

Optical absorption modulation by selective codoping of SiGe core-shell nanowires

Amato¹,

Palummo²,

Rurali³

et al. 2012

Journal of Applied Physics

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First-principles calculations on the structural, electronic, and optical properties of B-P codoped SiGe core-shell nanowires are discussed. We show that the simultaneous addition of B and P impurities into the wire can be energetically favored with respect to the single-doping. We demonstrate that impurities energetic levels in the band gap are dependent by the Si/Ge band offset, as well as by their location in the wire (i.e., core or shell region). This electronic tunability results in a significant optical modulation, as demonstrated by the red-shift of the first optical peak when B and P locations are switched in the wir

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Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

Cited by 34 publications

References 19 publications

InP/GaInP nanowire tunnel diodes

InP/GaInP nanowire tunnel diodes

Observation of negative differential resistance in mesoscopic graphene oxide devices

Optical absorption modulation by selective codoping of SiGe core-shell nanowires

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