Gallium Nitride Materials and Devices XVIII 2023
DOI: 10.1117/12.2646906
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Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Abstract: Suppressing the emission from (0001) plane region with low luminescence efficiency that exists on the top of nanowires (NWs) is necessary to realize highly efficient GaInN/GaN multi quantum shell (MQS) light-emitting diodes (LEDs). In this study, we attempted to improve the crystal growth by introducing electron blocking layers (EBLs) and to suppress the current leak in NW LEDs by using SiO2 insulating film on top of NWs. The EBL structure features different thicknesses at each crystalline plane to reduce the … Show more

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