Estimation of aluminum and gold bond wire fusing current and fusing time

Mertol, A.

doi:10.1109/96.365510

Cited by 26 publications

(7 citation statements)

References 3 publications

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“…The current constriction happens in the thin buckling beam section for vertical probes and at the tip section for cantilever probes. When an electrical current passes through a cantilever probe during the wafer level test, it heats the probe through a process known as Joule (or I 2 R) heating [5][6][7][8][9][10]. Joule heating is an energy dissipation phenomenon commonly observed in electrical current carrying conductors.…”

Section: Probe Burn Phenomenamentioning

confidence: 99%

Experimental characterization of wafer probe burn

Zafer¹,

Tunaboylu²

2016

Turk J Elec Eng & Comp Sci

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Abstract:The probing test is a typical quality control method for individual chips on a wafer. This study investigates the cantilever wafer probe current carrying capacity along a probe body in order to model the probe burn phenomenon by using experimental techniques and numerical simulation. The standard measurement approach used in the test industry is conducted to define the mechanical degradation of the cantilever probe on the wafer card and temperature distribution along the probe body is conducted using a conduction heat transfer equation via computational discretization. Maximum current carrying capacity is defined and the probe burn phenomenon is observed at the tip region of the tungsten-rhenium cantilever probe due to effects of Joule heating for both experimental and numerical results. Reasonably good agreement is observed between experimental and computational results.

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Section: Probe Burn Phenomenamentioning

confidence: 99%

Experimental characterization of wafer probe burn

Zafer¹,

Tunaboylu²

2016

Turk J Elec Eng & Comp Sci

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“…2(d)). The fusing voltage was calculated to be 10 V [9][10], and the contact force was known to be in the range 1-2 gf (9.8-19.6 mN) [8]. Therefore, the deflection of the probe beam was adjusted between 100 μm and 300 μm so that the contact force was in the abovementioned range.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of BeCu module probe array using heating and fusing currents

Lee

Kim

Kong

et al. 2011

2011 IEEE SENSORS Proceedings

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We have developed a novel probe array using BeCu sheets, to solve the high-production-cost problem associated with conventional MEMS probe cards. The BeCu probe has a simple structure and offers several advantages such as ease of fabrication and rapid prototyping; further, the fabrication process is cost-effective. The proposed array was fabricated by applying a suitable heating current (for plastic deformation via Joule heating) and fusing current (for cutting the array) to a BeCu beam. The stress relaxation time was 7 min during the application of a heating current of 4 A, and the fusing current was 20 A. The fabricated probe array is suitable for use in various complicated semiconductor chip tests.

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“…Wire temperature values can be measured using infrared thermal CCDs [16,4], however the image pixel resolution is usually greater than that of the dimensions of the wire, leading to errors in calculating the real temperature. Several methods have been proposed to compute and estimate the maximum current that can be conducted in a thin bonding wire [12][13][14].…”

Section: Introductionmentioning

confidence: 99%