Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures

Jóźwikowska, A.; Jóźwikowski, K.; Ciupa, Robert; Suligowski, M.

doi:10.1016/j.infrared.2019.04.020

Cited by 2 publications

(7 citation statements)

References 17 publications

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“…We verified our calculations by comparing them with experimental results obtained by (Kim and Razeghi 1998;Xie et al 2018). In this work, we use the same methods as in our work (Jóźwikowska et al 2019). We refer to that publication for their detailed descriptions.…”

Section: Introductionsupporting

confidence: 61%

“…4 cause such deformations of the lattice in the planes of growth of the heterostructures (marked as xz) that the lattice constant in all the heterostructure is the same and is equal a ∥ . In (Jóźwikowska et al 2019), we derived the formula for a ∥ in the mesa cylindrical structures. For the structure in Fig.…”

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

“…The parameters to be determined are the radius of curvature R and h b the distance of the undeformed layer from the base of the heterostructure. These quantities were derived in our earlier paper (Jóźwikowska et al 2019):…”

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

“…Figure 7 shows the diagram of the photodiode analyzed by us. We described it in detail in (Jóźwikowska et al 2019).…”

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

“…The reason for that are misfit dislocations generated in the areas of interfaces. This problem is described in detail in our previous work devoted to InAsSb heterostructures deposited on a GaAs substrate (Jóźwikowska et al 2019). In that paper we obtained expressions on the shift of the edge of the conduction band and of the valence band caused by doping, the lattice strain and the bending of structures.…”

Section: Introductionmentioning

confidence: 98%

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Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap

2019

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The goal of this work is the design of efficient infrared radiation detectors based on InAsSb compounds with two energy barriers around the absorber region. Two types of two-barrier detectors that work in the 3-5.5 μm wavelength range at 230 K is designed. Using our computer program to iteratively solve the Poisson equation, the spatial distribution of energy band edges in III-V heterostructures was calculated The influence of lattice stress, bending of the structure and doping on the energy shift of the edge of the bands is considered. Lattice strain is the cause of the formation of the misfit dislocations at the boundaries of the individual layers of the heterostructure. These dislocations partially relax the resulting stress and affect the lattice deformation in individual layers. From the minimum elastic energy condition, the density of these dislocations is determined. It has been shown that the band offset can be eliminated in the areas of both barriers in the designed two-barrier detectors.

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Section: Introductionsupporting

confidence: 61%

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

“…Figure 7 shows the diagram of the photodiode analyzed by us. We described it in detail in (Jóźwikowska et al 2019).…”

Section: Numerical Methods and Results Of Calculationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

See 3 more Smart Citations

Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap

2019

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Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

2020

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Using our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is almost completely relaxed by misfit dislocations forming matrixes in the interfaces’ areas. The average distances between dislocation lines in individual interfaces were calculated based on the minimum energy, i.e. elastic energy condition resulting from the interaction of stress fields and deformations caused by lattice misfit, bending and the presence of dislocation plus electrical energy of dislocations.

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Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures

Cited by 2 publications

References 17 publications

Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap

Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap

Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

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