Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

Abstract

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene's high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current-voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the

Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO2-Based Electrolyte

“…By using the theory proposed in ref. [11], the extrinsic in-plane capacitance of the SSD array is found to be 7.95 × 10 −18 F. The intrinsic cut-off frequency, = 1/(2 ), is estimated to be 1.51 THz, making this device suitable to be used in THz detection.…”

“…The current passing through a GSSD array can be derived by considering each SSD as a MOSFET with the drain and source connected using the Sichman-Hodges model [11,19]. The current is given by…”

“…SSDs fabricated from graphene (also known as graphene SSDs, GSSDs) have also been demonstrated [6,9,10], modelled [11], and simulated [12,13]. Due to the capability of SSDs constructed from InGaAs/InAlAs and other materials to operate at THz frequencies [4], and the greater carrier mobility in graphene, it is expected that GSSDs will also be capable of operating at THz frequencies.…”

“…The nature of 2D electronic devices such as the SSD makes them easy to upscale to large area production using patterning techniques such as imprinting, simplifying manufacture due to not needing to align multiple layers. The lack of a bandgap also results in the diode having zero threshold voltage [11].…”

Graphene self‐switching diode‐based thermoelectric rectifier

“…The self‐switching diode (SSD) is one such novel planar diode developed by Song et al in 2003 [9 ]. Since then, SSD has been fabricated with a wide variety of materials ranging from silicon‐on‐insulator, III–V group materials to novel 2D materials such as graphene, MoS 2 [10–16 ] etc. The electrical characteristics of SSD are similar to a conventional semiconductor diode, but its working principle is based on FET [11 ].…”