Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO₂-Based Electrolyte

Abstract

Low-frequency noise in electric double layer InGaZnO thin-film transistors gated with sputtered SiO2-based electrolyte.

Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?

“…In the conventional CNF with CMF model, a uniform trap density is assumed across the energy space, as depicted in Figure 3d-1. [14][15][16][17][18][19][20][21][22][23][24][25][26] This assumption is often applicable to c-Si-based FETs. [36,37] However, in AOS, there are defects within the channel exist known as sub-gap DOS, which exhibit a significant variation in distribution across different energy levels, as illustrated in Figure 3d-2.…”

“…In general, the 1/f noise in AOS TFTs has been explained using the CNF model that explains their behavior through random trapping/detrapping process of carriers in the channel to/from defect in the gate dielectric. [14][15][16][17][18][19][20][21][22][23][24][25][26] The CNF model is expressed as [14][15][16] S ID…”

“…However, the CNF model often fails to fully explain the LFN characteristics of AOS TFTs because the model is originally based on field-effect transistors (FETs) with single-crystalline Si (c-Si). [10] Accordingly, the correlated mobility fluctuation (CMF) model, [19,21,22,[24][25][26] Hooge's mobility fluctuation (HMF) model, [20] contact noise, [24,25] and generation-recombination (G-R) noise [20] have been used to complement the CNF model and describe the deviation in LFN characteristics of AOS TFTs. Table 1 provides a summary of previous studies that have analyzed the LFN characteristics of AOS TFTs and their attempts to interpret the deviations from the CNF model.…”

“…Consequently, there has been extensive research on LFN in AOS TFTs. [14][15][16][17][18][19][20][21][22][23][24][25][26] In these previous studies, the carrier number fluctuation (CNF) model that reflects the carrier trapping/detrapping process to/from gate oxide is mainly used to explain the LFN characteristics of the AOS TFTs. However, the CNF model often fails to fully explain the LFN characteristics of AOS TFTs because the model is originally based on field-effect transistors (FETs) with single-crystalline Si (c-Si).…”

Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS2 Field‐Effect Transistor with Hexagonal Boron Nitride

“…To enhance performance, ionic liquid (IL) to form an electric double layer (EDL) in replacement of the gate dielectric is commonly used due to the large capacitance associated. [ 8 ] In addition, to fully exploit its potential in future nanodevice applications, it is highly desired to characterize and further reduce its intrinsic low‐frequency noise (LFN). [ 9 ] Although the LFN and corresponding mechanisms in back‐gated ReS 2 FETs on SiO 2 and HfO 2 substrates have been recently investigated, [ 10 ] the LFN of ReS 2 using ILs or gels as the gate dielectric has yet to be reported.…”