Estimation of Residual Radioactivity and Radiation Damage in SiC After Neutron Irradiation

Lee, Ki-Man; Park, Byung-Gun

doi:10.1109/tns.2020.2970426

Cited by 6 publications

(7 citation statements)

References 21 publications

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“…26,[30][31][32][33][34][35][36][37][38][39][40][41][42] Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects. While significant work has been done for radiation effects in GaN [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]59 and SiC, [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][60][61][62]…”

mentioning

confidence: 99%

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Xia

Sharma

et al. 2022

ECS J. Solid State Sci. Technol.

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Ga2O3 is expected to show similar radiation resistance to that of GaN and SiC. This is not enough to explain the orders of magnitude difference in the relative resistance to radiation damage of these materials compared to GaAs or why dynamic annealing of defects is much more effective in Ga2O3. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials, vacancies, and antisites. With few experimental or simulation studies on single event effects in Ga2O3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high linear energy transfer and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage.

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confidence: 99%

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Xia

Sharma

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The displacement defects are cumulative and permanent; thus, the devices could gradually degrade. When neutron particles penetrate into SiC material and collide with lattice atoms, the momentum transfer knocks off interstitial atoms Si or C from their original site [14]. Such displacement plays a role as a defect or defect states.…”

Section: Introductionmentioning

confidence: 99%

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Lee

Kim

et al. 2022

Micromachines

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The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with EC − 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.

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“…Recently SiC was investigated for concrete production pertaining to particular applications [ 12 , 15 , 16 ]. SiC is a neutron attenuator and detector [ 17 ], and SiC is a radiation-tolerant ceramic. Woo et al used SiC in concrete to increase thermal conductivity and freeze and thaw resistance [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite

et al. 2022

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Flexural strength of concrete is an important property, especially for pavements. Concrete with higher flexural strength has fewer cracking and durability issues. Researchers use different materials, including fibers, polymers, and admixtures, to increase the flexural strength of concrete. silicon carbide and tungsten carbide are some of the hardest materials on earth. In this research, the mechanical properties of carbide concrete composites were investigated. The silicon carbide and tungsten carbide at different percentages (1%, 2%, 3%, and 4%) by weight of cement along with hybrid silicon carbide and tungsten carbide (2% and 4%) were used to produce eleven mixes of concrete composites. The mechanical tests, including a compressive strength test and flexural strength test, along with the rapid chloride permeability test (RCPT), were conducted. It was concluded that mechanical properties were enhanced by increasing the percentages of both individual and hybrid carbides. The compressive strength was increased by 17% using 4% tungsten carbide, while flexural strength was increased by 39% at 4% tungsten carbide. The significant effect of carbides on flexural strength was also corroborated by ANOVA analysis. The improvement in flexural strength makes both carbides desirable for use in concrete pavement. Additionally, the permeability, the leading cause of durability issues, was reduced considerably by using tungsten carbide. It was concluded that both carbides provide promising results by enhancing the mechanical properties of concrete and are compatible with concrete to produce composites.

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Estimation of Residual Radioactivity and Radiation Damage in SiC After Neutron Irradiation

Cited by 6 publications

References 21 publications

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite

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Estimation of Residual Radioactivity and Radiation Damage in SiC After Neutron Irradiation

Cited by 6 publications

References 21 publications

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite

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Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃