Estimation of the ultimate efficiency of a three-pin solar cell based on the GaAs/Si heterostructure

Kuznetsov, D. O.; Tishkovskii, E. G.; Legan, D. M.

doi:10.3103/s8756699011050293

Cited by 1 publication

(1 citation statement)

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“…One of the possible ways to increase the performance and efficiency of solar cells is to use multiple semiconductors in a single solar cell structure [6]. This structure consists of a set of serially connected layers (epitaxial growth or surface-activated bonding (SAB) methods) of semiconductor materials with different bandgap widths [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Improving the Electrical Properties of ITO/Si/GaAs/Si/ITO Solar Cell by Changing the GaAs Layer Position

Hebali¹,

Bennaoum²,

Azzeddine³

et al. 2023

J. Nano- Electron. Phys.

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Due to the importance of integrating III-V semiconductors with Si technology for future photovoltaic devices. In this paper, the influence of GaAs layer position on the electrical behavior of ITO/Si/GaAs/Si/ITO p-i-n junction solar cell has been studied using SILVACO 2D-Atlas simulation software. Current-voltage (I-V) and power-voltage (P-V) characteristics have been investigated at room temperature and under standard illumination conditions (AM1.5G). Short-circuit current (ISC), open-circuit voltage (VOC), maximum power (Pmax) and fill factor (FF) were extracted. The results showed that the performance of the ITO/Si/GaAs/Si/ITO solar cell improves when the position of the GaAs layer changes, as the electrical parameters of this solar cell increases when the GaAs layer approaches the cathode electrode. The ITO/p-Si/Si/GaAs/n-GaAs/ITO solar cell showed the best electrical performance compared to the rest of the solar cells, which was characterized by ISC  3.51 mA/cm 2 , VOC  1.16 V, Pmax  3.29 mW/cm 2 and FF  80.80 %.

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