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Silicon nanowires (SiNWs) solar cells are becoming an important axis of scientific research especially in the field of new technologies for photovoltaic energy. In this paper, static characteristics (I-V, P-V) and different electrical parameters (ISC, VOC, Imax, Vmax, Pmax and FF) of the SiNWs solar nanocell are studied according to the number of nanowires (n) at room temperature and under global (AM1.5G) illumination spectra using 2D-Atlas SILVACO software. The simulation results show that the silicon nanowires (SiNWs) solar nanocell is characterized by good electrical characteristics and high performance. Increasing the number of nanowires is a good technique for improving the behavior and electrical performance of the SiNWs solar cells.

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Due to the importance of integrating III-V semiconductors with Si technology for future photovoltaic devices. In this paper, the influence of GaAs layer position on the electrical behavior of ITO/Si/GaAs/Si/ITO p-i-n junction solar cell has been studied using SILVACO 2D-Atlas simulation software. Current-voltage (I-V) and power-voltage (P-V) characteristics have been investigated at room temperature and under standard illumination conditions (AM1.5G). Short-circuit current (ISC), open-circuit voltage (VOC), maximum power (Pmax) and fill factor (FF) were extracted. The results showed that the performance of the ITO/Si/GaAs/Si/ITO solar cell improves when the position of the GaAs layer changes, as the electrical parameters of this solar cell increases when the GaAs layer approaches the cathode electrode. The ITO/p-Si/Si/GaAs/n-GaAs/ITO solar cell showed the best electrical performance compared to the rest of the solar cells, which was characterized by ISC  3.51 mA/cm 2 , VOC  1.16 V, Pmax  3.29 mW/cm 2 and FF  80.80 %.