In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.
Silicon nanowires (SiNWs) solar cells are becoming an important axis of scientific research especially in the field of new technologies for photovoltaic energy. In this paper, static characteristics (I-V, P-V) and different electrical parameters (ISC, VOC, Imax, Vmax, Pmax and FF) of the SiNWs solar nanocell are studied according to the number of nanowires (n) at room temperature and under global (AM1.5G) illumination spectra using 2D-Atlas SILVACO software. The simulation results show that the silicon nanowires (SiNWs) solar nanocell is characterized by good electrical characteristics and high performance. Increasing the number of nanowires is a good technique for improving the behavior and electrical performance of the SiNWs solar cells.
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