Etch characteristics of HfO2 films on Si substrates

Norasetthekul, S.; Park, P.Y.; Baik, Kwang Hyeon; Lee, K.P.; Shin, Jae-Ho; Jeong, B.-S.; Shishodia, V.; Norton, D. P.; Pearton, S. J.

doi:10.1016/s0169-4332(01)00792-9

Cited by 50 publications

(14 citation statements)

References 17 publications

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“…It is clear from this table that RMS roughness increases from $ 5 to $12 nm for films deposited with increasing substrate temperature from 25 1C to 120 1C, whereas respective rise in average roughness is from $ 4 to $10 nm. The HfO 2 thin film deposited by dc sputtering of 5N Hf in O 2 plasma on Si substrate at 125 1C showed RMS roughness in the range from 2.25 nm to 2.67 nm [29] while it was in the range from 2 nm to 5 nm for HfO 2 thin film deposited by rf sputtering with or without biasing the Si substrate respectively [30]. Present values of RMS roughness are somewhat higher than those found in literature.…”

Section: Surface Propertiescontrasting

confidence: 53%

Optical characterization of hafnium oxide thin films for heat mirrors

Ramzan

Rana

Ahmed

et al. 2015

Materials Science in Semiconductor Processing

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Section: Surface Propertiescontrasting

confidence: 53%

Optical characterization of hafnium oxide thin films for heat mirrors

Ramzan

Rana

Ahmed

et al. 2015

Materials Science in Semiconductor Processing

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“…The melting and boiling points for the Sc 2 O 3 etch products in our plasma chemistries suggest that the chlorides are more volatile than their fluoride counterparts. This fact is consistent with the observed etch rate behavior in the two plasma chemistries 155–159…”

Section: Case Studiessupporting

confidence: 90%

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Pearton

Norton

2004

Plasma Processes & Polymers

110

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A review is given of commonly used plasma etching techniques and typical plasma chemistries for patterning electronic oxides, such as SiO 2 , HfO 2 , MgO, Sc 2 O 3 , and ZnO, polymers, and several important semiconductors (Si, GaAs, and InP). Issues that affect the reproducibility and manufacturability of etching processes, such as loading effects, endpoint detection, and etch selectivity, are also discussed. Finally, disruption to the etched surface in the form of polymer deposition, plasma residues, ion-induced displacement damage, or preferential loss of one of the lattice elements during the etch process are covered. SEM micrograph of features etched into a ZnMgO/ZnO structure using a BCl 3 /Cl 2 /Ar ICP plasma.

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“…Both dry and wet etchings have been developed to remove patterned HfO 2 [7,8]; however, HfO 2 is hard to be removed due to its low etching selectivity over Si substrate [9]. The incomplete removal of HfO 2 after etching processes causes high contact resistance in the source and drain regions.…”

Section: Introductionmentioning

confidence: 99%