Etch characteristics of TiN/Al2O3 thin film by using a Cl2/Ar adaptive coupled plasma

Woo, Jong‐Chang; Kim, Seung-Han; Kim, Chang-Il

doi:10.1016/j.vacuum.2011.08.006

Cited by 4 publications

(1 citation statement)

References 18 publications

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“…10,22 Cl radicals react with Ti and N to produce TiCl x and NCl x products, which can be volatile products with the assistance of ion bombardment. It has been reported that N 2 addition in chlorine plasmas can either increase or decrease TiN etch rate depending on the plasma conditions; 6,8,10 however, no clear explanation has been given regarding the role of N 2 .…”

Section: B Effect Of N 2 Gas Flow On Etch Rates and Nonvolatile Resimentioning

confidence: 99%

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Sang

Gour

Darnon

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow rate on the etch rates and the nonvolatile residues on TiN sidewalls is investigated. As N2 flow rate is increased up to 50 sccm, a change in the deposition of the nonvolatile residues on TiN sidewalls is observed. The current density–voltage characterizations of TiN devices fabricated with TiN nanostructure sidewalls are presented. The measured current densities of two different samples etched with low and high N2 flow rate, respectively, demonstrated the presence after cleaning of an insulating layer deposited on the sidewalls for low N2 flow rate only.

show abstract

Section: B Effect Of N 2 Gas Flow On Etch Rates and Nonvolatile Resimentioning

confidence: 99%

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Sang

Gour

Darnon

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

A novel TiC-TiN based spectrally selective absorbing coating: Structure, optical properties and thermal stability

Zhao

Gao

Qiu

et al. 2020

Infrared Physics & Technology

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Enhanced optical properties of TiN-based spectrally selective solar absorbers deposited at a high substrate temperature

Gao

Guo

Geng

et al. 2017

Solar Energy Materials and Solar Cells

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Etch characteristics of TiN/Al2O3 thin film by using a Cl2/Ar adaptive coupled plasma

Cited by 4 publications

References 18 publications

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

A novel TiC-TiN based spectrally selective absorbing coating: Structure, optical properties and thermal stability

Enhanced optical properties of TiN-based spectrally selective solar absorbers deposited at a high substrate temperature

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