Etch-free formation of porous silicon by high-energy ion irradiation

Perez-Bergquist, Alejandro G.; Naab, F.; Zhang, Yongfeng; Wang, Lumin M.

doi:10.1016/j.nimb.2011.01.009

Cited by 8 publications

(1 citation statement)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 14 indicates the presence of pore structures below the Si substrate. Similar pore production has been reported in literature as a consequence of ion implantation with doses several orders of magnitude larger than the ones we calculate incident upon our photocathode [13], which suggests that our estimate of the total ion dose may be far lower than the actual value. Furthermore, Fig.…”

Section: Remaining Questionssupporting

confidence: 89%

Photocathode behavior during high current running in the Cornell energy recovery linac photoinjector

Cultrera

Maxson

Bazarov

et al. 2011

Phys. Rev. ST Accel. Beams

View full text Add to dashboard Cite

The Cornell University energy recovery linac (ERL) photoinjector has recently demonstrated operation at 20 mA for approximately 8 hours, utilizing a multialkali photocathode deposited on a Si substrate. We describe the recipe for photocathode deposition, and will detail the parameters of the run. Post-run analysis of the photocathode indicates the presence of significant damage to the substrate, perhaps due to ion back-bombardment from the residual beam line gas. While the exact cause of the substrate damage remains unknown, we describe multiple surface characterization techniques (x-ray fluorescence spectroscopy, x-ray diffraction, atomic force, and scanning electron microscopy) used to study the interesting morphological and crystallographic features of the photocathode surface after its use for high current beam production. Finally, we present a simple model of crystal damage due to ion back-bombardment, which agrees qualitatively with the distribution of damage on the substrate surface.

show abstract

Section: Remaining Questionssupporting

confidence: 89%