Etched glass surfaces, atomic force microscopy and stochastic analysis

Abstract

The effect of etching time scale of glass surface on its statistical properties has been studied using atomic force microscopy technique. We have characterized the complexity of the height fluctuation of a etched surface by the stochastic parameters such as intermittency exponents, roughness, roughness exponents, drift and diffusion coefficients and find their variations in terms of the etching time.

Evaluation of surface roughness and nanostructure of indium tin oxide (ITO) films by atomic force microscopy

“…However, the films deposited at different sputtering gas pressures have different thicknesses (Mohammadi Gheidari et al 2007). The thicker film has a rough surface as shown in Figure 3 and as discussed by Jafari et al (2007) it has low transmission and electrical conductivity; this fact is well supported by the film's resistivity variation study (Barabasi and Stanley 1995). Taking these assumptions into consideration, the average transmissions (T ave ) in the visible region of the spectrum and the film's resistivity may be determined (Mohammadi Gheidari et al 2007).…”

“…The relative intensity of the (222)/(400), interplaner distances, average optical surface resistivity and transmission of the films in various annealing temperatures are also summarized in Table I. The surface resistivity of the films takes its minimum value at 400 1C along with transmission enhancement, which is attributed to larger carrier mobility, film crystallite improvement and grain size enlargement at this temperature (Barabasi and Stanley 1995, Jafari et al 2003, Bashar 1997, Mohammadi Gheidari et al 2007, Hu et al 2004, Vassant Kumar and Mansingh 1989, Aggour et al 2000.…”

“…In particular, microscopes equipped with powerful softwares, such as image analyzing softwares, promote the extraction of necessary data needed to interpret the experiment results in detail. In this system, atomic force microscopy (AFM) method characterizes the profile of surface morphology and its nanostructure at high precision (Bruce 1997, Barabasi and Stanley 1995, Jafari et al 2003. Generally, in the AFM method, the contact atomic force microscopy (C-AFM) mode is selected to study the semiconductor surfaces; in this mode the tip-sample contact area is minimum, providing the highest resolution (subnanometer) in imaging of stochastic topographical features.…”

Growth, characterization, and investigation of H2 gas sensing performance of Al-doped ZnO thin films synthesized by plasma focus device

“…The active surface is proportional to surface roughness parameters such as roughness exponent, standard deviation, and correlation length [35]. In this research, to analyze and compare the surface roughness of the deposited films, we measured the roughness of three random areas over the surface of the deposited sample and recorded the average and root mean square (rms) values of the measurements.…”

Anomalous scaling in surface roughness evaluation of electrodeposited nanocrystalline Pt thin films

“…There is an increasing interest for understanding the thin film growth (or material dissolution) mechanism and kinetics of surface roughness evolution. In order to perform a quantitative study on the complex behaviour of the samples' roughness, the roughness parameters and multi-fractality of different thin films have been calculated by several research groups [6][7][8][9].…”