Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

Lee, J.H.; Kwon, B. S.; Lee, N.-E.

doi:10.1016/j.tsf.2012.02.047

Cited by 6 publications

(3 citation statements)

References 24 publications

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“…To investigate the reason for the differences in SiO 2 etch rates and etch selectivities, the radical intensities of Ar/C 4 F 8 plasmas operated under different source rf frequency conditions and pulsed/CW modes were measured using OES. Figure 3 shows the optical emission intensity ratios of CF 2 (275.4 nm)/Ar (750.1 nm), F (703 nm)/Ar (750.1 nm), 16,17) and CF 2 /F measured as a function of source rf frequency for the pulsed/CW modes shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Kim

Jeon

Mishra

et al. 2014

Jpn. J. Appl. Phys.

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Section: Resultsmentioning

confidence: 99%

Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Kim

Jeon

Mishra

et al. 2014

Jpn. J. Appl. Phys.

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“…The increased Si/O ratio of SiO 2 under decreasing duty ratio is related to the less effective removal of Si species from SiO 2 and decreased etch rate of SiO 2 , which is consistent with the formation of F-rich or C-deficient CH x F y polymer. 11 …”

Section: Etch Characteristics Of Sio 2 In Mlhm Structurementioning

confidence: 99%

“…10 For the etching of the final SiO 2 mask layer using fluorocarbon plasmas, dual-frequency superimposed capacitively-coupled plasma (DFS-CCP) has been extensively used. [11][12][13] In this configuration, high-frequency (HF) and low-frequency (LF) power sources are connected in an electrode. The HF power source controls the plasma generation (i.e., the fluxes and Copyright: American Scientific Publishers species of the ions and radicals), while the LF power source adjusts the ion bombardment energy and charge accumulation density.…”

Section: Introductionmentioning

confidence: 99%

Effects of Bias Pulsing on Etching of SiO<SUB>2</SUB> Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks

Kim¹,

Choi²,

Chae³

et al. 2016

j nanosci nanotechnol

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In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

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Study of SiO₂ Etching Processing with CH₄/SF₆ Plasmas

Bao

Hao

et al. 2020

Physica Status Solidi (a)

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Silicon dioxide (SiO2) layers using photoresist (PR) masks are etched by inductively coupled plasma in CH4/SF6 under various etching conditions. A thin CHxFy polymer layer which exists on the surface of sample during steady‐state etching is observed. The steady‐state CHxFy layer reduces the physical sputtering of ions, resulting in the etching rate of PR decreases significantly. Although the high‐density plasmas can enhance the physical sputtering to some extent and give SiO2 more opportunities to react with fluorine atoms, it is helpful to improve the etching rate of SiO2. By optimizing process conditions, the thickness of the steady‐state CHxFy layer and the density of ions are regulated, and a reasonable selective etching is obtained.

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Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

Cited by 6 publications

References 24 publications

Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Effects of Bias Pulsing on Etching of SiO<SUB>2</SUB> Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks

Study of SiO₂ Etching Processing with CH₄/SF₆ Plasmas

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Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

Cited by 6 publications

References 24 publications

Effect of source frequency and pulsing on the SiO2etching characteristics of dual-frequency capacitive coupled plasma

Effect of source frequency and pulsing on the SiO2etching characteristics of dual-frequency capacitive coupled plasma

Effects of Bias Pulsing on Etching of SiO<SUB>2</SUB> Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks

Study of SiO2 Etching Processing with CH4/SF6 Plasmas

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Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Study of SiO₂ Etching Processing with CH₄/SF₆ Plasmas