2004
DOI: 10.1016/j.apsusc.2003.09.031
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Etching characteristics of TiNi thin film by focused ion beam

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Cited by 16 publications
(9 citation statements)
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“…The widely used traditional etching methods are wet and dry etching with a precision that does not go far beyond the micrometer scale. , Alternatively, focused ion beam (FIB) etching and gas-assisted electron beam induced etching (EBIE) are structuring techniques at the sub-10 nm scale. , FIB often results in unavoidable ion implantation, staining, and surface damage . Although EBIE can avoid such degradation of the material, it requires gas injection and exhaust systems ,, and might lead to contamination with different gaseous precursors. In addition, surface roughening caused by FIB etching and EBIE , dominates the morphology of the surfaces and limits the structural precision. The precision of 10 nm does not satisfy future needs of nanofabrication where the subnanometer or even atomic scale has to be reached.…”
Section: Resultsmentioning
confidence: 99%
“…The widely used traditional etching methods are wet and dry etching with a precision that does not go far beyond the micrometer scale. , Alternatively, focused ion beam (FIB) etching and gas-assisted electron beam induced etching (EBIE) are structuring techniques at the sub-10 nm scale. , FIB often results in unavoidable ion implantation, staining, and surface damage . Although EBIE can avoid such degradation of the material, it requires gas injection and exhaust systems ,, and might lead to contamination with different gaseous precursors. In addition, surface roughening caused by FIB etching and EBIE , dominates the morphology of the surfaces and limits the structural precision. The precision of 10 nm does not satisfy future needs of nanofabrication where the subnanometer or even atomic scale has to be reached.…”
Section: Resultsmentioning
confidence: 99%
“…The FIB has also been used successfully as both an analytical instrument and a means for preparing specimens for sub-sequent analysis by scanning electron microscopy (SEM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (Dobrzhinetskaya et al 2003, Haswell et al 2003, Mackenzie and Smith 1990, Vasile et al 1999. The FIB has also been proven to pattern materials with nanometer dimensions (Pickard et al 2003, Rubanov and Munroe 2004, Xie et al 2004). In the second half of the 1990s, applications combining in situ FIB sectioning with FIB imaging have attracted significant attention in the materials science community (Phaneuf 1999, Rubanov andMunroe 2004).…”
Section: Introductionmentioning
confidence: 99%
“…The same observation (constant sputtering yield) is also reported elsewhere. 18 To obtain vertical sidewall patterning, using a low ion current is preferable to obtain finer ion beams, which can reduce material redeposition. 19,20 C. Incident angle Figure 11 presents an SEM image of rectangular trenches being milled to examine the effect of the ion incident angle on the sputtering yield.…”
Section: 18mentioning
confidence: 99%