Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth

Abstract

The bound-state properties and hyperfine structure splitting in the ground S 1 2 (L = 0)-states of the three-electron beryllium-muonic atoms 9 Be 4+ µ − e − 3 and 10 Be 4+ µ − e − 3 are determined numerically with the use of highly accurate variational five-body wavefunctions. All computations of the berylliummuonic atoms are performed with the use of the two independent electron spin functions.The analysis of the hyperfine structure of various muonic atoms is an important method which is often used to determine the magnetic nuclear properties (see, e.g., [1,2]). Recently, we have calculated the hyperfine structure splitting in the ground S 1 2 (L = 0)-states of the berylliummuonic atoms 9 Be 4+ µ − e − 3 and 10 Be 4+ µ − e − 3 [3]. Our goal in this work is to improve the overall accuracy of the method used in [3]. In particular, in our present calculations the two independent spin functions are used for the three-electron subsystem instead of a single basis set. Furthermore, the total numbers of basis functions used in this study are significantly larger than analogous numbers in [3]. By using the new, improved version of our computational method we evaluate the hyperfine splitting in the five-body beryllium-muonic atoms. In addition to the hyperfine splitting we also determine a number of bound-state properties. Such properties are of great interest for better understanding of the internal structure of the beryllium-muonic atoms.Note that each of the beryllium-muonic atoms contains three electrons (e − ), one negatively charged muon (µ − ) and a heavy beryllium nucleus M Be 4+ , where the symbol M designates the mass of the beryllium nucleus. In atomic units, whereh = 1, m e = 1, |e| = 1, the non-relativistic Hamiltonian of an arbitrary beryllium-muonic atom takes the form

Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport

“…Under optimized conditions at present, we have obtained the highest Si etching rate of 38 m/min, 27) which is more than 2 orders of magnitude higher than that obtained by hot wire or low-pressure plasma methods. 19,[28][29][30][31][32] Probably, this result is related to the high H atom generation using high-power microwave plasma. Moreover, it was found that the Si recovery as SiH 4 increases over 90% by setting the transit time of H 2 gas in the plasma to less than 20 s. For the efficient formation of Si material, the combination of high Si etching rate with high Si recovery is necessary.…”

Selective epitaxial growth of Si thin films by ECR plasma CVD

“…In the present apparatus, (110) orientation is also found. On the other hand, in a previous experiment by the authors, etching was found to be more difficult for the Si(110) substrate than for the Si(100) substrate [6]. Hence, because the (110)-oriented film is deposited on the SiO 2 substrate and its etch rate is slower than the (100)-oriented film deposited on the Si substrate, the magnitudes of the depo-sition rates of the two substrates are considered to be interchanged.…”

Understanding the Effect of Hydrogen Surface Passivation and Etching on the Shape of Silicon Nanocrystals

“…About a decade ago, Sasaki and Takada, prepared various single crystal surfaces of Si (100, 110, and 111), and dosed then with hydrogen atoms to study etch rates. 53 They found that the etch rate followed the order (111) < (110) < (100). Conceptually if one were to begin with a spherical crystal one could expect that etching would lead to a cubic structure as illustrated in Figure 5.…”