Etching effect of tertiary-butyl chloride during InP-nanowire growth

Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki

doi:10.1016/j.jcrysgro.2014.06.032

Cited by 4 publications

(8 citation statements)

References 29 publications

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“…We also used tertiarybutylchloride (TBCl) in order to enhance the axial growth and reduce the radial growth for nanowires. 22) The InSb nanowires were grown at 350 °C for 60 min.…”

Section: IIImentioning

confidence: 99%

Efficient gate control of spin–orbit interaction in InSb nanowire FET with a nearby back gate

Takase

Tateno

Sasaki

2019

Appl. Phys. Express

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Electrical tuning of spin–orbit interaction (SOI) is important for spintronics. Here we report that InSb nanowire with a nearby back gate structure enables efficient tuning of the Rashba SOI with small gate voltage. Consequently, the Rashba coupling parameter is larger than those obtained for various previously reported III–V nanowire devices. Our findings demonstrate that InSb nanowire with this back gate structure will provide prominent and easy-to-use devices in the fields of spintronics and spin–orbitronics.

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“…We also used tertiarybutylchloride (TBCl) in order to enhance the axial growth and reduce the radial growth for nanowires. 22) The InSb nanowires were grown at 350 °C for 60 min.…”

Section: IIImentioning

confidence: 99%

Efficient gate control of spin–orbit interaction in InSb nanowire FET with a nearby back gate

Takase

Tateno

Sasaki

2019

Appl. Phys. Express

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“…2a and b, it is evident that it is both due to accelerated axial VLS growth and decelerated coaxial VS growth. A similar impact on the GR is observed for the addition of HCl [33, 43] or tert-butyl-chloride (TBCl) [44] during NW growth. In both cases, the VS growth on the side facets is reduced or completely suppressed by a corrosive effect of the chlorine species [45–47].…”

Section: Resultsmentioning

confidence: 58%

“…It is argued that the portion of the group III species, which would contribute to VS growth in the absence of the Cl species, contributes to VLS growth instead, probably in the form of InCl for InP NWs [33]. While in these studies, the increase of Cl species always involves a decrease in the NW volume [33, 44], the volume of the GaP(N) NWs investigated here depends comparatively little on the concentration of UDMH and in some cases even increases with the UDMH concentration (Fig. 2d).…”

Section: Resultsmentioning

confidence: 99%

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Steidl

Peh

et al. 2018

Nanoscale Res Lett

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III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via the Au-catalyzed vapor-liquid-solid (VLS) mechanism. The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering. Analysis of the crystal structure of NWs with and without N reveals zinc blende structure with an intermediate amount of stacking faults (SF). Interestingly, N incorporation leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction.

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“…The GaP nanowire growth was carried out in a low-pressure metalorganic vapor phase epitaxy reactor. [17][18][19][20][21] The carrier gas was palladium-diffused H 2 , and the flow rate was about 6.0 l min −1 . TEGa was the group-III source, and TBP was the group-V source.…”

Section: Methodsmentioning

confidence: 99%

“…7,16) Instead of high-pressure HCl gas, we have been using tertiarybutylchloride (TBCl), because it is liquid at room temperature and can be treated in the same way as the usual metalorganic sources. Successful results have already been reported for InP nanowires, 17,18) and we have used the nanowires to make photonic crystal lasers. 19,20) Here, we present the growth characteristics of GaP nanowires made using TBCl.…”

Section: Introductionmentioning

confidence: 91%

Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Tateno¹,

Zhang²,

Sasaki

et al. 2018

Jpn. J. Appl. Phys.

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Growth of a freestanding wurtzite gallium phosphide (GaP) nanowire was investigated for solar-energy conversion applications. Tertiarybutylchloride (TBCl) was used to grow straight nanowires at high temperatures at which wurtzite GaP forms. By alternating the supply of triethylgallium with tertiarybutylphosphine and TBCl, we could form straight wurtzite GaP nanowires with few stacking faults. We also investigated p- and n-type dopants and found a concentration level of about 1018 cm−3 for each dopant. We fabricated a solar cell from an axially pin-type GaP nanowire diode sample and found that the nanowire-grown area had a high photocurrent density due to the light-concentrating property of the individual nanowires.

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Etching effect of tertiary-butyl chloride during InP-nanowire growth

Cited by 4 publications

References 29 publications

Efficient gate control of spin–orbit interaction in InSb nanowire FET with a nearby back gate

Efficient gate control of spin–orbit interaction in InSb nanowire FET with a nearby back gate

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

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