Ethiopian Warriorhood

Berhane-Selassie, Tsehai

doi:10.1017/9781787443419

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Its wide direct bandgap [8] can suppress the interaction between the defect levels in band gap and the bulk states, while the weak photoacoustic coupling could produce a zero-phonon line (ZPL) with narrow line width. The RT defect SPEs in GaN were firstly realized in experiment by Berhane et al in 2017 and the measured ZPL varied from 620 nm to 780 nm [9]. Then in 2018, highperformance RT SPEs in the telecom range (about 1000 nm -1300 nm) were further found in GaN [10], but their origin and defect atom structure are still unclear.…”

Section: Introductionmentioning

confidence: 99%

First-Principle Prediction of Stress-Tunable Single-Photon Emitters at Telecommunication Band from Point Defects in GaN

Yuan¹,

Wang²,

Hou³

et al. 2023

Preprint

View full text Add to dashboard Cite

Point defect-based single-photon emitters (SPEs) in GaN have aroused a great deal of interest due to their room-temperature operation, narrow line width and high emission rate. The room-temperature SPEs at the telecommunication bands have also been realized recently by localized defects in GaN in experiments, which are highly desired for the practical applications of SPEs in quantum communication with fiber compatibility. However, the origin and underlying mechanism of the SPEs remain unclear to date. Herein, our first-principle calculations predict and identify an intrinsic point defect NGa in GaN that owns a zero-phonon line (ZPL) at telecommunication windows. By tuning the triaxial compressive strain of the crystal structure, the ZPL of NGa can be modulated from 0.849 eV to 0.984 eV, covering the fiber telecommunication windows from the O band to the E band. Besides the ZPL, the formation energy, band structure, transition process and lifetime of the SPEs under different strains are investigated systematically. Our work gives insight into the emission mechanism of the defect SPEs in GaN and also provides effective guidance for achieving wavelength-tunable SPEs working in fiber telecommunication windows.

show abstract

Section: Introductionmentioning

confidence: 99%