Etude et modélisation de la dégradation des transistors MOS submicroniques soumis à une contrainte électrique

Cabon-Till, B.; Ghibaudo, G.

doi:10.1051/rphysap:01986002105030500

Cited by 6 publications

References 38 publications

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Degradation of submicron MOSFETs after aging

Cabon¹,

Ghibaudo²

1988

Phys. Stat. Sol. (a)

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The degradation is investigated of submicron MOS transistors after electrical stress. New methods for the aging investigation based on field effect mobility measurements are presented. The correlations between the different degradation parameters are studied and analysed by a one-dimensional modelling that takes into account the potential fluctuations induced by the surface state and charge generation. Moreover, the degradations are found to increase with the bias parameter K = U,/U, applied during stress. I n addition, the partial reversibility of degradations shows that electron trapping appears as the main cause of aging. Ce papier s'interesse A la degradation des transistors MOS apr& contrainte Blectrique. De nouvelles methodes d'investigation du vieillissement bashes sur des mesures de mobilith d'effet de champ sont presentees. Les correlations entre les diffbrents parametres de degradation sont Btudibes et analysees par un modble uni-dimensionnel qui prend en compte les fluctuations de potentiel induites par la creation d'etats et de charges de surface. De plus, on trouve que les dbgradations augmentent comme le parametre de contrainte K = U,/U,. Enfin, la reversibilite partielle des degradations montre que le piegeage d'blectrons apparait comme la cause principale des vieillissements observes. l ) 23, rue des Martyrs,

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