Influence of hot-electron-induced aging on the dynamic conductance of short-channel MOSFETs

Ghibaudo, G.; Cabon, B.

doi:10.1016/0038-1101(87)90098-0

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1989

1997

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Cited by 4 publications

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“…The drain current in weak inrersion is then given by an expression similar to (12) in which I d s a t is replaced by I d s a t exp (yBUd/kT) [ where Gd = gd(0) is the ohmic conductance. The output conductance characteristics in weak inversion can be useful for the extraction of the interface state density N,, in the case of very short channel MOSFETs [17] and aged devices [20]. Fig.…”

Section: 'mentioning

confidence: 99%

Analytical modelling of the MOS transistor

Ghibaudo

1989

Phys. Stat. Sol. (a)

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Generic analytical expressions useful for the modeling of the MOSFET operation as a function of gate and drain biases are presented. Both, the linear and the non‐ohmic regimes of operation are analyzed. Analytical expressions for the drain current, the transconductance, the output conductance, the noise spectral density, and the current fluctuation intensity are provided not only for room temperature but also for the liquid helium temperature range where a specific mobility law is required.

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Section: 'mentioning

confidence: 99%