Static Measurements and Parameter Extraction

Ghibaudo, G.

doi:10.1007/978-1-4613-1355-7_1

Cited by 6 publications

(1 citation statement)

References 39 publications

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“…The calculation performed by estimating the slope of output conductance g d =dI d /dV d in the weak inversion region monitored the evolution of interface states in the front channel. The expression for g d is [8] )…”

Section: Methodsmentioning

confidence: 99%

Reliability effects in 0.15 μm low dose SIMOX N-MOSFETs designed for low power/low voltage applications

Dimitrakis

Jomaah²,

Papaioannou³

2000 Mediterranean Conference for Environment and Solar. COMPLES'2K (Cat. No.00EX493)

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The effects of hot-carriers during the off-state operation of 0.15µm Low Dose SIMOX Partially Depleted MOSFETs are investigated. A correlation between the ageing characteristics of the MOSFETs and the created defects is presented. The front channel degradation is strongly affected by the back gate bias. This is due to parasitic bipolar transistor. However, the degradation mechanisms of both channels are different. Deep Level Transient Spectroscopy was used for defect evaluation in both channels and interfaces: the front and the back. In depth studies, showed that during the stress two different kinds of defects are created: electron traps similar to those induced after ion implantation of Si and hole traps similar to those induced after electron irradiation of Si.

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Section: Methodsmentioning

confidence: 99%