Low Frequency Noise Characterization of 0.18 μm Si CMOS Transistors

Low-frequency noise behavior of tunneling field effect transistors

“…Due to its extremely small effective gate length ͑Ͻ10 nm͒, the amplitude of RTS noise in our TFETs is comparable to that in very small MOSFETs, 15 even though the transconductance is much lower. However, as TFET performance is enhanced by the introduction of alternative lowbandgap materials ͑Ge͒ and more effective electrostatic modulation of tunneling junction electric field, we can expect that RTS noise will become a major issue for the TFET-based circuits of the future.…”

“…12,13 Since the LFNgenerating mechanism is the trapping at the channel-gate dielectric interface, MOSFET LFN measurements are also used to extract the density and energy distribution of the interface traps. [14][15][16][17][18][19] As TFET technology matures, LFN properties of TFETs will also impact circuit functionality. But even at the single device level, the 1 / f 2 LFN dependence in TFETs provides a useful experimental signature distinguishing the tunneling current mechanism from standard MOS-FET current.…”

Study of low frequency noise in the 0.18 μm silicon CMOS transistors

“…Based on these data, we can notice that the modified carrier number fluctuation model where correlated mobility fluctuations inducing extra drain current fluctuation seems to be the most appropriate to explain the leveI noise in the devices, and particularly for the P MOS transistor. This can be explained by the larger value of the parameter (11 fbp the P MOS transistor [24]. …”

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…The approach is particularly suitable when the goal is to examine the evolution of the noise level with bias or to obtain a statistics for the noise levels among devices on one or from several wafers. Due to its simplicity, the approach of choosing a frequency of interest is widely used, almost in every single publication, and it allowed verifying that the variation of the noise is a reciprocal function of the device area, as shown with one example from [74] in Figure 11 for MOS transistors. However, the approach of choosing a single frequency from the spectrum is vulnerable to large uncertainty owing to deviation of noise spectrum from 1/f slope, since the approach inherently assumes 1/f slope when estimating the normalized noise at 1Hz, as required for the noise parameter K F .…”

“…The tunneling ∆n model for 1/f noise in MOS transistors, which was originally suggested in [85], has been followed up widely [47,48,49,50,51,52,53,54,55,56,72,74,80,82,83,87,89,91,95,101,103,106,107,110,124,126,127,128,136,137,138,139,140,141,142,143,144,145]. It assumes that some charge carriers are trapped in the depth of the gate oxide.…”