EUV discharge light source based on a dense plasma focus operated with positive and negative polarity

Fomenkov, Igor V.; Böwering, N.; Rettig, C. L.; Melnychuk, S.; Oliver, Ian Roger; Hoffman, J.; Khodykin, Oleh V.; Ness, R.; Partlo, William N.

doi:10.1088/0022-3727/37/23/007

Cited by 49 publications

(32 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The rate equations is given by dn Zþ1 dt ¼ n e n Z SðZ; TeÞ À n e n Zþ1 ðSðZ þ 1; TeÞ þ a r ðZ þ 1; TeÞ þ n e a 3b ðZ þ 1; TeÞÞ þ n e n Zþ2 ða r ðZ þ 2; TeÞ þ n e a 3b ðZ þ 2; TeÞÞ; (7) where S is the collisional ionization rate coefficient, a r is the radiative recombination rate coefficient, and a 3b is the threebody recombination rate coefficient.…”

Section: Numerical Model and Numerical Schemementioning

confidence: 99%

“…To date, insufficient source power 3 remains a critical issue for the High Volume Manufacturing (HVM) in EUV lithography. Z-pinch DPP plasmas [4][5][6][7] are efficient sources for the produce of high energy EUV radiation. In a Z-pinch, the pulsed current induces an azimuthal magnetic field so that the magnetic piston compresses the plasma column toward the axis, accompanied by a shock wave.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation and mitigation of the magneto-Rayleigh-Taylor instabilities in Z-pinch gas discharge extreme ultraviolet plasma radiation sources

et al. 2013

View full text Add to dashboard Cite

The development and use of a single-fluid two-temperature approximated 2-D MagnetoHydrodynamics code is reported. Z-pinch dynamics and the evolution of Magneto-Rayleigh-Taylor (MRT) instabilities in a gas jet type Extreme Ultraviolet (EUV) source are investigated with this code. The implosion and stagnation processes of the Z-pinch dynamics and the influence of initial perturbations (single mode, multi-mode, and random seeds) on MRT instability are discussed in detail. In the case of single mode seeds, the simulation shows that the growth rates for mm-scale wavelengths up to 4 mm are between 0.05 and 0.065 ns À1 . For multi-mode seeds, the mode coupling effect leads to a series of other harmonics, and complicates MRT instability evolution. For perturbation by random seeds, the modes evolve to longer wavelengths and finally converge to a mm-scale wavelength approximately 1 mm. MRT instabilities can also alter the pinch stagnation state and lead to temperature and density fluctuations along the Z axis, which eventually affects the homogeneity of the EUV radiation output. Finally, the simulation results are related to experimental results to discuss the mitigations of MRT instability. V C 2013 AIP Publishing LLC.

show abstract

Section: Numerical Model and Numerical Schemementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulation and mitigation of the magneto-Rayleigh-Taylor instabilities in Z-pinch gas discharge extreme ultraviolet plasma radiation sources

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Adequate in-band EUV power supplied by these sources is the key to high volume-production throughput and low cost of ownership [18][19][20][21][22][23][24][25]. Because of the EUV absorption in gases, the source chamber, optical chamber, and wafer printing chamber are kept at the same vacuum level without filters, which necessitates strict debris and contamination control.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

show abstract

“…Since the establishment of the Asian African Association on Plasma Training (AAAPT) in 1982, joint effort of various laboratory on the research work based on the 3 kJ UNU/ICTP PFF has produced numerous publications [4,5]. Recent work on the plasma focus discharge aims in two major directions, one into improvement of energy density for fusion and the other towards development of portable low energy system for the radiation output [6,7,8].…”

Section: Introductionmentioning

confidence: 99%