2005
DOI: 10.1117/12.604853
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EUV laser produced plasma source development for lithography (Invited Paper)

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Cited by 4 publications
(3 citation statements)
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“…However, if the laser power density is chosen correctly then a very bright unresolved transition array(s) (UTA(s)) [34][35][36][37][38][39][40][41][42][43][44][45][46] can form in the 13.5 nm EUV regime. These quasi-continua are mainly due to the 4p 6 4d N -4p 5 4d N +1 + 4p 6 4d N −1 4f transition arrays formed predominantly from the ion stages Sn 8+ to Sn 13+ (6 N 1) [7,8,10,38,39].…”
Section: Introductionmentioning
confidence: 99%
“…However, if the laser power density is chosen correctly then a very bright unresolved transition array(s) (UTA(s)) [34][35][36][37][38][39][40][41][42][43][44][45][46] can form in the 13.5 nm EUV regime. These quasi-continua are mainly due to the 4p 6 4d N -4p 5 4d N +1 + 4p 6 4d N −1 4f transition arrays formed predominantly from the ion stages Sn 8+ to Sn 13+ (6 N 1) [7,8,10,38,39].…”
Section: Introductionmentioning
confidence: 99%
“…In the prepulse case, the density profile of the generated plasma is dependent on the delay between the two pulses and on the relative pulse energies as well [16]. At 13.5 nm an intensity increase of 70% has been observed, when the prepulse was delayed by several ns with respect to the main pulse [10].…”
mentioning
confidence: 98%
“…The spectral distribution of the radiation in an unresolved transition array (UTA) is rather wide with the maximum at around 13.5 nm [6,7]. At the beginning of the development of laserplasma EUV sources, the tin target was in the form of a thin foil or sheet of metal [8][9][10]. The theoretical analysis has shown that a target made solely of tin is ineffective because the ionic concentration in the plasma is too high.…”
mentioning
confidence: 99%