2010
DOI: 10.1007/s00340-010-4193-5
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Laser-produced plasma EUV source based on tin-rich, thin-layer targets

Abstract: In this paper a new approach to a laser-produced plasma EUV source based on a tin target is presented. A thin layer of pure tin and composite layers consisting of Sn with Si, SiO and LiF are investigated. The target composed of several thin layers produces less debris than the other targets and provides a conversion efficiency (CE) in the 13.5-nm ± 1% band at least comparable to the CE for the pure tin slab target. The largest CE was observed for the target composed of a mixture of Sn and LiF, due to the fact … Show more

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Cited by 12 publications
(6 citation statements)
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“…1 EUV radiation from a laser produced tin plasma has been studied extensively in recent years for its potential application as a light source for semiconductor lithography. [2][3][4][5][6][7][8][9] A highbrightness and debris free source emitting at 13.5 nm radiation with 2% full bandwidth (in-band) is necessary for this purpose. The selection of EUV source at 13.5 nm is due to the availability of Si-Mo multilayer (ML) mirrors which reflect $70% of radiation at normal incidence with a bandwidth of 2% centered at 13.5 nm.…”
Section: Introductionmentioning
confidence: 99%
“…1 EUV radiation from a laser produced tin plasma has been studied extensively in recent years for its potential application as a light source for semiconductor lithography. [2][3][4][5][6][7][8][9] A highbrightness and debris free source emitting at 13.5 nm radiation with 2% full bandwidth (in-band) is necessary for this purpose. The selection of EUV source at 13.5 nm is due to the availability of Si-Mo multilayer (ML) mirrors which reflect $70% of radiation at normal incidence with a bandwidth of 2% centered at 13.5 nm.…”
Section: Introductionmentioning
confidence: 99%
“…(iii) The third factor is related to the two different mechanisms of photon emissions occurring in the two targets. Although the SiC photopeak shows a similar integral electric signal, it is generated by a continuum band emission due to electron bremsstrahlung as the main component emitted from the solid [1] and by a discrete and characteristic UV and SXR emission, due to atomic deexcitations, as the main component emitted from the gas [22,23].…”
Section: Resultsmentioning
confidence: 98%
“…In our experiment we used two different inner gases, Kr and a mixture of Kr/Xe (90/10), while maintaining He as the outer gas. By using the double gas puff target, a conversion efficiency as high as ∼0.42% has been achieved for a wavelength of 13.5 nm [27], using a Xe/He target. The molecular gases to be irradiated by the SXR radiation from the double gas puff plasma source, are then injected into the vicinity of the LPP source by means of an additional valve ;2 mm in diameter.…”
Section: Methodsmentioning
confidence: 99%