EUV lithography process challenges

Buitrago, Elizabeth; Kulmala, Tero S.; Fallica, Roberto; Ekinci, Yasin

doi:10.1016/b978-0-08-100354-1.00004-1

Cited by 20 publications

(20 citation statements)

References 98 publications

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“…The presence of Ag NPs and their optical and structural properties were characterized by a UV-2550 spectrophotometer. Copper film thickness was measured by Dektak 3 Stylus optical profilometer. To obtain the copper thickness for each configuration, three samples were prepared and average copper thicknesses with corresponding standard deviations were calculated.…”

Section: Characterizationsmentioning

confidence: 99%

See 1 more Smart Citation

Selective Electroless Copper Deposition by Using Photolithographic Polymer/Ag Nanocomposite

Ryspayeva

Jones

Esfahani

et al. 2019

IEEE Trans. Electron Devices

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Section: Characterizationsmentioning

confidence: 99%

“…Inkjet printing is another technique for printing conductive patterns on a substrate [2]. However, inkjet printing suffers from low manufacturing capability, while photolithography remains a dominant mass production method in the microelectronics industry [3]- [5]. Hence, there is continuous research in conductive track formation.…”

mentioning

confidence: 99%

Selective Electroless Copper Deposition by Using Photolithographic Polymer/Ag Nanocomposite

Ryspayeva

Jones

Esfahani

et al. 2019

IEEE Trans. Electron Devices

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“…The performance of the different materials was evaluated using EUV interference lithography (EUV-IL) at the Swiss Light synchrotron facility located at the Paul Scherrer Institute [7]. The technique has been previously described in detail elsewhere [8]. EUV-IL uses a mask with transmission-diffraction gratings that is illuminated by a spatially coherent beam of EUV light (λ = 13.5 nm) [4,9].…”

Section: Methodsmentioning

confidence: 99%

State-of-the-art EUV materials and processes for the 7nm node and beyond

et al. 2017

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Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

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“…The choice of 13.5 nm, or EUV as it is commonly referred to, as the imaging radiation wavelength after the 193 nm has a long history of scientific investigations, technology breakthroughs and controversies that lasted more than two decades [20]. A review of the first years of EUV lithography has been presented in [21], where also the successful demonstration of printing for the first time 19 nm dense lines/spaces with optical lithography using an interferometric Lloyd's mirror maskless set-up is discussed [22]. The current patterning challenges at EUV aiming at a viable industrial technology have been also presented in [21] and more recently in [23,24].…”

Section: Euv Introduction and Main Technical Challengesmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

2020

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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EUV lithography process challenges

Cited by 20 publications

References 98 publications

Selective Electroless Copper Deposition by Using Photolithographic Polymer/Ag Nanocomposite

Selective Electroless Copper Deposition by Using Photolithographic Polymer/Ag Nanocomposite

State-of-the-art EUV materials and processes for the 7nm node and beyond

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

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