EUV mask line edge roughness

Zweber, Amy E.; Gallagher, Emily; Sanchez, Martha I.; Senna, Tasuku; Negishi, Yoshiyuki; Konishi, Toshio; McGuire, Anne; Bozano, Luisa; Brock, Phillip J.; Truong, Hoa D.

doi:10.1117/12.916291

Cited by 4 publications

(3 citation statements)

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“…From our data we can say that we achieved better than 0.9 nm rms (2.7 nm 3σ) LER in the HM8006 layer for the wide structures and better than 0.65 nm rms (1.95 nm 3σ) LER for the thinnest, one pixel wide lines which are used to write the nested L-structures with a half pitch of 27.5 nm. These numbers are comparable to LER figures obtained for standard nonchemically amplified resists in high-resolution e-beam lithography and compatible with mask requirements for EUV lithography …”

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confidence: 84%

Thermal Probe Maskless Lithography for 27.5 nm Half-Pitch Si Technology

et al. 2013

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Thermal scanning probe lithography is used for creating lithographic patterns with 27.5 nm half-pitch line density in a 50 nm thick high carbon content organic resist on a Si substrate. The as-written patterns in the poly phthaladehyde thermal resist layer have a depth of 8 nm, and they are transformed into high-aspect ratio binary patterns in the high carbon content resist using a SiO2 hard-mask layer with a thickness of merely 4 nm and a sequence of selective reactive ion etching steps. Using this process, a line-edge roughness after transfer of 2.7 nm (3σ) has been achieved. The patterns have also been transferred into 50 nm deep structures in the Si substrate with excellent conformal accuracy. The demonstrated process capabilities in terms of feature density and line-edge roughness are in accordance with today's requirements for maskless lithography, for example for the fabrication of extreme ultraviolet (EUV) masks.

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confidence: 84%

Thermal Probe Maskless Lithography for 27.5 nm Half-Pitch Si Technology

et al. 2013

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“…(Figure 1, center). Early studies simulations [ between LER printing [5,6] tern transfer in ughness are amo fferent critical dim he reflective na the order of 2-Å ultilayer coatin ases, decreasin ial images of a t mination, the spec off-axis imaging s of aerial imag [2], predicting R on independe ]: they found th EUV lithograp ong the paramete mensions; they'r ature of EUV p Å-RMS [1]. D g, causing pha ng the illuminat typical EUV ph ckle caused by m g conditions.…”

Section: Introductionmentioning

confidence: 99%

Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks

et al. 2016

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EUV lithography uses reflective photomasks to print features on a wafer through the formation of an aerial image. The aerial image is influenced by the mask's substrate and pattern roughness and by photon shot noise, which collectively affect the line-width on wafer prints, with an impact on local critical dimension uniformity (LCDU). We have used SHARP, an actinic mask-imaging microscope, to study line-width roughness (LWR) in aerial images at sub-nanometer resolution. We studied the impact of photon density and the illumination partial coherence on recorded images, and found that at low coherence settings, the line-width roughness is dominated by photon noise, while at high coherence setting, the effect of speckle becomes more prominent, dominating photon noise for exposure levels of 4 photons/nm 2 at threshold on the mask size.

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“…[13][14][15][16][17][18] In 2003, Constantoudis et al proposed a new LER characterization methodology in which the LER is quantified together by three parameters: standard deviation, correlation length and roughness exponent. However, a single number LER method is not good anymore when people continue to reduce LER and decompose it in the frequency domain.…”

Section: Introductionmentioning

confidence: 99%

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

Sun

Wang

Beique

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Line edge roughness (LER) and line width roughness (LWR) are analyzed based on the frequency domain 3σ LER characterization methodology during pattern transfer in a self-aligned double patterning (SADP) process. The power spectrum of the LER/LWR is divided into three regions: low frequency, middle frequency, and high frequency regions. Three standard deviation numbers are used to characterize the LER/LWR in the three frequency regions. Pattern wiggling is also detected quantitatively during LER/LWR transfer in the SADP process. Sun et al.: Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 08/20/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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EUV mask line edge roughness

Cited by 4 publications

References 0 publications

Thermal Probe Maskless Lithography for 27.5 nm Half-Pitch Si Technology

Thermal Probe Maskless Lithography for 27.5 nm Half-Pitch Si Technology

Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

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