EUV mask pattern defect printability

Liang, Ted; Zhang, Guojing; Naulleau, Patrick; Myers, Alan M.; Park, Seh-Jin; Stivers, Alan R.; Vandentop, Gilroy

doi:10.1117/12.681844

Cited by 17 publications

(9 citation statements)

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“…Vandentop covered four topics concerning the status of EUV masks at Intel. [6][7][8] (1) Mask fabrication pilot line process: 6 The pilot line keeps the baseline process on track. Its 87-nm-thick TaN absorber layer and anti-reflection coating showed good performance.…”

Section: "Intel Euv Mask Status" By Gilroy Vandentop Of Intelmentioning

confidence: 99%

PMJ 2006 panel discussion review: mask technologies for EUVL

Sugawara

Sano

2006

SPIE Proceedings

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This is a report on a panel discussion in Photomask Japan held on April 19, 2006. We discussed mask technologies for extreme ultraviolet lithography (EUVL). Seven panelists presented their views on critical issues in the production of practical EUV masks. The wrap-up is as follows: A local polishing method has yielded an average flatness of 70 nm, but it increases both surface roughness and defect density. Regarding defect density, the large gap between the target and the one expected from the learning curve led to the proposal of realistic (i.e., relaxed) specifications for flatness and defect density. The capability of detecting defects with a PSL equivalent size of 25 nm or less remains an issue. It was also suggested that the local slope of the back surface of blanks (masks) should be standardized. Mask patterning has already been demonstrated to be sufficient for the 32-nm half pitch node. Captive and commercial mask shops are ready to provide masks for full-field exposure tools. Regarding handling and shipping, dual-pod type carriers and robotic handling have been demonstrated to adequately protect masks from particle contamination. Finally, a 3-point support method in EB writing was examined in conjunction with a new EB correction scheme.

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Section: "Intel Euv Mask Status" By Gilroy Vandentop Of Intelmentioning

confidence: 99%

PMJ 2006 panel discussion review: mask technologies for EUVL

Sugawara

Sano

2006

SPIE Proceedings

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“…The reason is that for EUVL generation, the device pattern feature size happens to be exceedingly small and calls for higher repairing accuracy than would be required in optical lithography. [14][15][16] Regarding the types of defects, the nature of the pattern defects in the EUV mask is mostly the same as in the case of optical masks except for those defects that are classified as reflective multilayer defects, such as bump-or pit-type phase defects that propagate through the multilayer during its deposition on the substrate surface. According to the ITRS-2011, the defect size on the EUV mask is defined as the square root of the defect area on a 2-D mask surface.…”

Section: Introductionmentioning

confidence: 98%

Residual-type mask defect printability for extreme ultraviolet lithography

Amano¹,

Iida²,

Hirano³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The reason is that for EUVL generation, the device pattern feature size happens to be exceedingly small and calls for a higher repairing accuracy than would be required in optical lithography. [15][16][17] Regarding the types of the defects, the nature of the pattern defects in the EUV mask is mostly the same as in the case of optical masks except for those defects that are classified as reflective multilayer defects, such as bump or pit phase defects. These propagate through the multilayer mirror during its deposition on to the substrate surface and are hard to repair.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

Amano¹,

Abe

2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Predicting the lithography impact of a phase defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the phase defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the second was an at-wavelength darkfield inspection tool capable of capturing a phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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EUV mask pattern defect printability

Cited by 17 publications

References 0 publications

PMJ 2006 panel discussion review: mask technologies for EUVL

PMJ 2006 panel discussion review: mask technologies for EUVL

Residual-type mask defect printability for extreme ultraviolet lithography

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

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