EUV pupil optimization for 32nm pitch logic structures

Río, David; Blanco, Víctor Francisco Sampedro; Franke, Joern-Holger; Gillijns, Werner; Dusa, Mircea V.; Poortere, Etienne De; Adrichem, Paul van; Lyakhova, Kateryna; Spence, Chris; Hendrickx, Eric; Biesemans, S.; Nafus, Kathleen

doi:10.1117/12.2503321

Cited by 3 publications

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“…To study the new dry resist process, imec Process of Reference (PoR) chemical amplified resist (CAR) process has been chosen as the reference process, and the Titan M2 source is used for the wafer exposure. 11 Therefore, the pitch 32nm horizontal dense LS is used as the wafer anchor, using mask CD 16nm to print wafer CD 16nm.…”

Section: Model Accuracy and Patterning Challengesmentioning

confidence: 99%

Improving OPC model accuracy of dry resist for low k1 EUV patterning

Xu,

Gillijns,

et al. 2024

DTCO and Computational Patterning III

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Extreme ultraviolet lithography (EUVL) with a numerical aperture of 0.33 has been part of high-volume manufacturing since 2019. To guarantee the downscaling of the technology node, advanced material and patterning becomes very critical in terms of resolution, roughness, defectivity and process window. Therefore, several entities are developing new resists and processes. However, to adopt new resist and process into production, performing model-based optical proximity correct (OPC) is an essential step. Thus, an accurate OPC model is required. In this paper, we investigate the Siemens calibre CM1 OPC model accuracy of dry resist process, which is conducted on N5 M2 design (horizontal pitch 32nm).

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Section: Model Accuracy and Patterning Challengesmentioning

confidence: 99%