Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Fig. 2(d) and (e) show the photos of direct-drive GaN device/module from two different vendors [24].…”

Section: A Current Gan Power Devicesmentioning

confidence: 99%

“…Very few SC reports are available on direct-drive device. [24] reports the SC tests of a 650 V, 100 A direct-drive GaN HEMT, which is intentionally stopped in 100 ns. The device can withstand a SC current up to 358 A within this SC duration.…”

Section: A Short Circuit Robustnessmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

111

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“…VisIC Technologies' D3GaN technology (Direct Drive D-Mode) has been developed to meet the high reliability standards of the automotive industry and offers the lowest losses per RDS (on). The evaluation results of a 650 V, 100 A D3GaN power switch in a top-cooled surface-mount device package in terms of static and dynamic performance, surge energy, and short-circuit robustness are presented in [69]. In comparison with similar voltage and current ratings for GaN HEMT (high-electron-mobility transistor) and SiC MOSFET power switches, the D3 GaN power switch exhibits a higher gate threshold voltage, a smaller total gate charge, a lower device capacitance, and a faster switching speed.…”

Section: Mlis On the Market And Future Trendsmentioning

confidence: 99%

A Survey on the State-of-the-Art and Future Trends of Multilevel Inverters in BEVs

2023

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All electric vehicles are the only way to decarbonize transport quickly and substantially. Although multilevel inverters have already been used in some transportation modes, they are rarely used in road transportation, especially in light-duty passenger BEVs. With the transition to a high 800-V DC link to extend the driving range and enable extreme fast charging, the possibility of using multilevel inverters in commercial light-duty passenger BEVs becomes feasible. Higher efficiency, higher power density, better waveform quality, lower switching frequency, the possibility of using low-rated switches, and inherent fault tolerance are known advantages of multilevel inverters that make them an efficient option for replacing 2-level inverters in high DC link passenger BEVs. This paper discusses high DC link voltage benefits in light-duty passenger BEVs, presents the state-of-the-art of different conventional multilevel inverter topologies used in BEVs, and compares them with conventional 2-level inverters from different aspects and limitations. Based on commercial upper-class passengers’ BEV data and a review of multilevel inverters on the market, future trends and possible research areas are identified.

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