Evaluation of a novel ultra small target technology supporting on-product overlay measurements

Smilde, Henk-Jan H.; Boef, Arie den; Kubis, Michael; Jak, Martin; Schijndel, M. van; Fuchs, Andreas; Schaar, Maurits van der; Meyer, S.; Morgan, Stephen P.; Wu, Jon; Tsai, V W.; Wang, Cathy; Bhattacharyya, Kaustuve; Chen, Kai-Hsiung; Huang, Guo-Tsai; Ke, Chih-Ming; Huang, Jacky

doi:10.1117/12.916382

Cited by 23 publications

(14 citation statements)

References 8 publications

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“…Fundamentals Based on polarized angle-resolved optical scatterometry [9], µDBO is a metrology technique that is sensitive for the asymmetry in the diffraction pattern from gratings described in figure 1. The µDBO technology employs this asymmetry detection to the overlay metrology [2]. The µDBO-target translates a lateral position-difference between two layers in a stack into an asymmetry in the angle-resolved diffraction pattern.…”

Section: Yieldstar µDbo Technology (In-chip Overlay)mentioning

confidence: 99%

Advanced litho-cluster control via integrated in-chip metrology

Bhattacharyya

Smilde

Boef

et al. 2013

ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference

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The high-end semiconductor lithography requirements for overlay and focus control in near-future ITRS nodes are at subnanometer level. This development is extremely challenging for the metrology precision and accuracy, as scaling down to the subangstrom level is required for this. On top of the extreme metrology requirements, direct feed-back control of the lithographic steps is needed to meet the future node requirements. Integrated metrology with in-chip measurements, advanced sampling and control-mechanism (using the highest order of correction possible with scanner interface today), are a few of such technologies considered in this publication.

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Section: Yieldstar µDbo Technology (In-chip Overlay)mentioning

confidence: 99%

Advanced litho-cluster control via integrated in-chip metrology

Bhattacharyya

Smilde

Boef

et al. 2013

ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference

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“…logic devices, and therefore to be small enough to fit within the chip product area. [2] Here, optical scatterometry is considered for its excellent balance between target size, precision and throughput.…”

Section: Introductionmentioning

confidence: 99%

Target design optimization for overlay scatterometry to improve on-product overlay

et al. 2015

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Scatterometry mark design for improvement of the metrology performance is investigated in this joint work by ASML and STMicroelectronics. The studied marks are small, enabling metrology within the device area. The new mark-design approach reduces the effects from the mark-edges during the metrology measurement. For this, small assist-features are integrated in the mark design on the wafer. Thereby the new designs: 1. enlarge the metrology measurement-window, 2. optimize the repeatability and accuracy of the metrology at given mark size, 3. allow added functionality to existing marks within the current mark area, such as monitoring process asymmetry or multiple layer information, 4. allow for mark miniaturization at equal performance, enabling intra-field positioning. With this metrology tool-optical proximity correction (MT-OPC) included in the mark design, the metrology window is enhanced, while improved on-product overlay performance is obtained.

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“…In the semiconductor industry, scatterometry is increasingly being employed for critical dimension metrology [10,11]. Scatterometry is an optical characterization technique for periodic structures, where the structure dimensions are determined by fitting the measured reflection efficiencies to a simulation database, as the reflection efficiencies depends on the structure dimensions.…”

Section: Introductionmentioning

confidence: 99%

“…For generating the simulation database, the approximate structure dimensions must be known a priori. The current approaches are mainly targeting precise measurements of the very high quality samples produced by the semiconductor industry [11,12]. However, for industrial polymer production single nanometer precision is not needed, as the samples cannot be expected to have perfectly well defined shapes.…”

Section: Introductionmentioning

confidence: 99%

Spatial characterization of nanotextured surfaces by visual color imaging

et al. 2016

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We present a method for characterization of nanostructures from the visual color of the structures, obtained with an ordinary color camera. The method provides a macroscale overview image from which micrometer sized regions can be analyzed independently, hereby revealing long-ranged spatial variations of the structures. The method is tested on injection molded polymer line gratings, and the height and filling factor determined with confidence intervals similar to more advanced imaging scatterometry setups.

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Evaluation of a novel ultra small target technology supporting on-product overlay measurements

Cited by 23 publications

References 8 publications

Advanced litho-cluster control via integrated in-chip metrology

Advanced litho-cluster control via integrated in-chip metrology

Target design optimization for overlay scatterometry to improve on-product overlay

Spatial characterization of nanotextured surfaces by visual color imaging

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