Evaluation of additives and current mode on copper via filling

Jung, Myung-Won; Song, Young-Sik; Yim, Tae-Hong; Lee, Jae-Ho

doi:10.1109/ectc.2011.5898776

Cited by 4 publications

(1 citation statement)

References 7 publications

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“…Cross‐sections of Cu‐filled TSV by the PC and PRC methods are shown in Figure 6 (Jung et al , 2011). All cases have organic additives in the plating bath.…”

Section: Pulse Current and Pulse Reverse Current Methodsmentioning

confidence: 99%

Cu filling of TSV using various current forms for three‐dimensional packaging application

Roh

Lee²,

Kim³

et al. 2013

Soldering &Amp; Surface Mount Technology

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through-silicon-vias (TSV) for threedimensional (3D) packaging. Design/methodology/approach -The paper takes the form of a literature review. Findings -Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high-speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies. Originality/value -TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu-filling of TSV.

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“…Cross‐sections of Cu‐filled TSV by the PC and PRC methods are shown in Figure 6 (Jung et al , 2011). All cases have organic additives in the plating bath.…”

Section: Pulse Current and Pulse Reverse Current Methodsmentioning

confidence: 99%

Cu filling of TSV using various current forms for three‐dimensional packaging application

Roh

Lee²,

Kim³

et al. 2013

Soldering &Amp; Surface Mount Technology

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The effect of different TSV electroplating levelers on the copper residual stress

Feng

Cao

et al. 2012

2012 13th International Conference on Electronic Packaging Technology &Amp; High Density Packaging

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Effect of leveler on microstructure and stress of electroplated copper for TSV application

Feng

Luo

et al. 2013

2013 3rd IEEE CPMT Symposium Japan

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Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.

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Evaluation of additives and current mode on copper via filling

Cited by 4 publications

References 7 publications

Cu filling of TSV using various current forms for three‐dimensional packaging application

Cu filling of TSV using various current forms for three‐dimensional packaging application

The effect of different TSV electroplating levelers on the copper residual stress

Effect of leveler on microstructure and stress of electroplated copper for TSV application

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