Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials

Nakayamada, T.; Matsuo, Kazuya; Hayashi, Yoshihito; Izumi, Akira; Kadotani, Y.

doi:10.1016/j.tsf.2007.06.184

Cited by 35 publications

(17 citation statements)

References 4 publications

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“…Due to short bond length, high bond strength and wide band gap, the ternary Si-C-N films possess high hardness [1][2][3], adjustable friction coefficient [4], high resistance to wear and corrosion [4][5][6][7][8] and play an important role in solar cell, flat panel displays, optical memories [9] as well as Cu diffusion barriers [10]. So far, the silicon carbon nitride (SiCN) films have been synthesized by using different chemical vapor deposition (CVD) methods, such as microwave plasma chemical vapor deposition (MW-CVD) [11,12], electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) [1,10], hot wire chemical vapor deposition (HWCVD) [13,14], plasma-enhanced chemical vapor deposition (PECVD) [8,15,16], vapor-transport chemical vapor deposition (VT-CVD) [17].…”

Section: Introductionmentioning

confidence: 99%

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

Zhou

Yue

Wang

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

Zhou

Yue

Wang

et al. 2010

Journal of Alloys and Compounds

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“…It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.…”

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confidence: 99%

From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisilazane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC x N y O z :H, whereas that of high temperature films, by the formula SiC x N y . The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si 3 N 4 . Films of the composition SiC x N y O z :H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.Nowadays more severe requirements are imposed on the quality of construction materials used in many fields of science and technology. New materials are necessary stable to high temperatures, mechanical wear, abrasion, corrosion and oxidation [1]. That is why various methods are intensively developed for the synthesis of refractory superhard coatings (hardness > 20 GPa), which have long lifetime, enhanced hardness, and are relatively cheap [2]. For example, coatings are made of materials alternative to the expensive diamond coatings. Binary solid compounds like SiC, TiC, TiN can provide an enhanced wear stability, but hardly can possess a wide variety of functional properties.Recent research has shown that coatings on the basis of ternary compounds exceed in their functional properties the coatings based on binary compounds [3]. One of promising ternary materials is silicon carbonitride. It possesses new properties as compared with crystalline binary compounds Si 3 N 4 and SiC. Films of silicon carbonitride possess an exclusive combination of physicochemical properties like high thermal conductivity, thermal stability (up to 1500°C), resistance to oxidation, high hardness, chemical inertness, that makes them ideal wear-and corrosionstable materials for applications in aggressive media, for high-temperature industrial and strategic applications [4][5][6][7][8][9][10]. It is assumed that a high thermal, chemical, and mechanical stability is achieved due to the absence of boundaries between the grains and of the oxides as secondary phases in these coatings. Besides, such properties as low density and good thermal shock resistance, are very important in the future for aerospace, automobile, and other fields of industry. It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.Ad...

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“…[7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects. [2] In this communication we report on the fabrication of amorphous SiCN films by RPCVD using hydrogen as an upstream gas for microwave plasma generation, and tris(dimethylamino)silane (TrDMAS), (Me 2 N) 3 SiH, as a novel single-source precursor, being a carrier of Si-N and C-N units. Owing to the presence of hydrosilyl, Si-H bonds in the TrDMAS molecule, this precursor is strongly reactive with hydrogen atoms fed from the plasma region to the CVD reactor.…”

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confidence: 99%

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Wróbel

Blaszczyk-Lezak

Uznański

et al. 2010

Chemical Vapor Deposition

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Owing to a complex structure composed of carbidic Si-C and nitridic Si-N and C-N units, silicon carbonitride (SiCN) films display many unique properties. They are promising coating materials in advanced technology. Most recent reports [1][2][3][4][5][6] revealed many unique features of SiCN films which may be used as hard, dense, and high temperatureand corrosion-resistant coatings for metals (giving excellent tribological behavior), as well as highly selective gas separation membranes. [7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects.[2]In this communication we report on the fabrication of amorphous SiCN films by RPCVD using hydrogen as an upstream gas for microwave plasma generation, and tris(dimethylamino)silane (TrDMAS), (Me 2 N) 3 SiH, as a novel single-source precursor, being a carrier of Si-N and C-N units. Owing to the presence of hydrosilyl, Si-H bonds in the TrDMAS molecule, this precursor is strongly reactive with hydrogen atoms fed from the plasma region to the CVD reactor. Moreover, the dimethylaminosilyl, Me 2 NSi, groups of the precursor may easily undergo a condensation reaction at elevated temperatures. The present study was undertaken in view of our earlier reports on the SiCN films produced by RPCVD from other aminosilane precursors, such as (dimethylamino)dimethylsilane, [8][9][10] Me 2 NSiHMe 2 , and bis(dimethylamino)methylsilane, [11,12] (Me 2 N) 2 SiHMe, which revealed their very promising useful properties. We describe the effect of substrate temperature on the growth rate, chemical structure, surface morphology, density, and photoluminescence of produced SiCN films. Figure 1 shows the effect of thermal activation on the kinetics of SiCN film growth from TrDMAS characterized by the substrate temperature, T S , dependency of the thickness-based film growth rate, r d , determined in the form of an Arrhenius plot. The decrease of r d with increasing T S (Fig. 1) and the negative value of the apparent activation energy E a ¼ À14 kJ mol À1 calculated from the slope of the Arrhenius plot, implies that film growth is mainly limited by the adsorption of film-forming precursors from the gas phase onto the growth surface. In this case, the apparent activation energy is expressed as E a ¼ E r þ DH ad , where E r denotes the activation energy of the film-forming reaction and DH ad is the apparent heat of adsorption of the film-forming precursors onto the growth surface and has a negative value, [13,14] thus the negative E a values are due to the fact that the absolute DH ad value is higher than the E r value.

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Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials

Cited by 35 publications

References 4 publications

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering

From organosilicon precursors to multifunctional silicon carbonitride

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

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