2017
DOI: 10.1039/c6ra23068g
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Evaluation of different metal salt solutions for the preparation of solar cells with wide-gap Cu2ZnGeSxSe4−x absorbers

Abstract: In this work, thin-film solar cells with a kesterite-type Cu2ZnGeSxSe4−x (CZGSSe) absorber were prepared from four different metal salt solutions.

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Cited by 26 publications
(22 citation statements)
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“…Its similarity to the extensively studied Cu 2 ZnSnS x Se 4-x (CZTSSe) offers potential for fast progress in the improvement of material properties and solar cell efficiency, with a record value of 6.0% so far [3]. However, the band gaps in previous publications are in a range between 1.4 eV [4] and 1.5 eV [5] and are therefore still too low for application as top cells in multijunction solar cells.…”
Section: Introductionmentioning
confidence: 64%
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“…Its similarity to the extensively studied Cu 2 ZnSnS x Se 4-x (CZTSSe) offers potential for fast progress in the improvement of material properties and solar cell efficiency, with a record value of 6.0% so far [3]. However, the band gaps in previous publications are in a range between 1.4 eV [4] and 1.5 eV [5] and are therefore still too low for application as top cells in multijunction solar cells.…”
Section: Introductionmentioning
confidence: 64%
“…Further details about the metal salt solution can be found in Ref. [5]. In a second step, the precursor layer was annealed for 15 min at 550 • C in an Se-containing nitrogen atmosphere to induce grain growth and to exchange S for Se to form the CZGSSe absorber.…”
Section: Methodsmentioning
confidence: 99%
“…Thus, the full range of Ge substitution has been investigated to some extent, including the pure Ge compound in recent reports, demonstrating that the CZGSe exhibits also kesterite structure [123]. Among the most relevant pure Ge kesterite results, Schnabel et al reported efficiencies exceeding 5% for a sulfo-selenide CZGSSe (E g ∼1.5 eV) solar cell [124], while for the selenide CZGSe (Eg∼1.4 eV) compound, Sahayaraj et al published a 5.5% efficiency device with a remarkable V OC of 744 mV [125]. Intriguingly, the Ge based kesterite showed less electrical losses from band tailing/electrostatic potential fluctuations compared to Ge free devices [125,126].…”
Section: Germanium (Ge)mentioning
confidence: 99%
“…20 Similar absorber compound witnessed an open circuit voltage of 744 mV recognized as the highest V OC obtained with a device efficiency of 5.5%. 21,22 The investigation on Ge-substituted kesterite could be additionally interesting in order to broaden the application of kesterites, allowing to go towards wider bandgap materials for PV tandem solar cells or semi-transparent devices. Nevertheless, this material has been much less studied than its Sn-based counterpart, and although recently first important studies about the fundamental properties of CZGeSe have been published, [23][24][25][26][27][28][29][30][31] there are still several issues that need to be addressed for further progress.…”
Section: Introductionmentioning
confidence: 99%