Evaluation of Double-Sided Planetary Grinding Using Diamond Wheels for Sapphire Substrates

Wang, Limin; Huang, Zhongwei; Yu, Yiqing; Xu, Xipeng

doi:10.3390/cryst8070262

Cited by 14 publications

(3 citation statements)

References 20 publications

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“…Zhong et al [53] indicate a greatly lower comparing to this research ratio because they applied a fixed abrasive CMP following a polishing process with a fabric cloth pad. Other experimental studies [54][55][56] survey an entirely polishing process, in which the sliding motion is an important factor in the initial and middle steps, therefore, the ratio is lower than this research.…”

Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 70%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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Our aim with this study was a new insight into the sub-nanoscale of polishing and provides the atomic view of the material removal and wear mechanisms by carrying out molecule dynamics simulation. We proposed and analyzed a model with a diamond abrasive particle that sliding or rolling on the surface of GaN workpieces. The authors investigated, step by step, the effects of polishing depths, speeds, abrasive sizes, and crystalline orientations on the wear mechanisms and material removal. The wear mechanisms of the sliding motion were adhering, ploughing, and cutting, depending on the depths. While the wear mechanisms of rolling motion are adhering and ploughing. Notably, in both stages of sliding and rolling, there is an existence of a critical point at 5.0 Å depth when we considered the deformation behaviors. Below that critical point, the GaN workpiece will present an elastic deformation. From the aforementioned point, the workpiece would be plastically deformed. Besides, from 10 Å depth, the dislocation began to appear and evolute simultaneously with the development of the maximum shear stress. The sliding motion on the Ga-face could remove a greater number of atoms than that of the N-face. Moreover, direction [1-100] on Ga-face requesting more forces to polish than direction [11-20]. In conclusion, the main achievements that contribute to the field can be summarized as follows: the atomistic wear mechanisms of sliding and rolling motions, material removal, and the role of rolling motion at the sub-nanoscale during the ultrafine flat polishing process.

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Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 70%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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“…Many scholars have conducted research on the double-sided CMP processing of sapphire wafers. In the study of double-sided trajectories, Hu et al established a double-sided planetary grinding mathematical model [ 7 ] and evaluated the nonuniformity of the lapping wheel [ 8 , 9 ]. Zhang proposed the specific detailed distribution ranges of process parameters by the trajectory uniformity of the double-sided mechanical polishing [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Influence of the Motion State of Ultra-Thin Sapphire Based on Layer-Stacked Clamping (LSC)

et al. 2023

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Ultra-thin sapphire wafer processing is receiving increasing attention in the LED substrate industry. In the cascade clamping method, the motion state of the wafer determines the uniformity of material removal, while the motion state of the wafer is related to its friction coefficient in the biplane processing system, but there is little relevant literature discussing the relationship between the motion state of wafer and friction coefficient. In this study, an analytical model of the motion state of sapphire wafers in the layer-stacked clamping process based on the frictional moment is established, the effect of each friction coefficient on its motion is discussed, the base plate of different materials and different roughness are experimentally studied, the layer-stacked clamping fixture is prepared in this way, and finally the failure form of the limiting tab is analyzed experimentally. The theoretical analysis shows that the sapphire wafer is mainly driven by the polishing plate, while the base plate is mainly driven by the holder, and the rotation speed of the two is not the same; the material of the base plate of the layer-stacked clamping fixture is stainless steel, the material of the limiter is glass fiber plate, and the main form of failure of the limiter is to be cut by the edge of the sapphire wafer and damage the material structure.

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“…Li [10,11] conducted orthogonal experiments on double-sided CMP of sapphire wafers, studied the effects of different processing parameters on material removal rate, surface roughness, and depth of SSD, and adopted the optimization method of orthogonal experimental results based on weight matrix, and obtained the effect of each factor on The in uence degree of the index value of the orthogonal experiment was compared, the processing results of sapphire wafers under different processing methods were compared, and the material removal equation based on experience and theory was established. Wang [12] examined the effects of grinding pressure, grinding wheel speed, and grinding wheel grit on the surface precision and machining e ciency, approximately obtaining 10 m/min in material removal rate.…”

Section: Introductionmentioning

confidence: 99%

Performance assessment of ultrathin sapphire wafer polishing with layer stacked clamping (LSC) method

Chen

Han

Feng

et al. 2023

Int J Adv Manuf Technol

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Ultrathin sapphire wafer is of great signi cance in the semiconductor eld. In order to explore the effective clamping method of ultrathin sapphire wafer in double-side polishing, this paper studied the characteristic of Layer stacked clamping (LSC) method on polishing ultrathin sapphire wafer with doubleside polishing machine. A self-made friction force test platform was built for learning the friction force between sapphire wafer and baseplate with different baseplate (stainless steel, cast iron, aluminum alloy) and different baseplate surface roughness (R a 3.6 nm, 68.2 nm, 210.1 nm, 517.9 nm). Single factor polishing experiments were carried out on baseplate with different atness (PV value 5.3 µm, 9.8 µm, 19.9 µm, 29.7 µm) and different thicknesses (0.082 mm, 0.104 mm, 0.119 mm). The double-side polishing experiments were carried out to compare the polishing performance on the ultrathin sapphire polishing between LSC method and traditional para n bonding method. The results show that the friction force of stainless steel and iron increase under the adsorption of droplets. Stainless steel performs higher friction force and is more suitable for making the baseplate. The inner fringe of limiter was cut off by the edge of the sapphire wafer and a slope was thereby formed. According to polishing results, LSC method has higher processing e ciency per unit time. The surface roughness, atness and material removal rate are better than para n bonding. Finally, a smooth surface with surface roughness (R a ) 1.3 nm and atness (PV) 0.988 µm was obtained with LSC method.

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Evaluation of Double-Sided Planetary Grinding Using Diamond Wheels for Sapphire Substrates

Cited by 14 publications

References 20 publications

Atomistic wear mechanisms and deformation evolution in polishing

Atomistic wear mechanisms and deformation evolution in polishing

Analysis of the Influence of the Motion State of Ultra-Thin Sapphire Based on Layer-Stacked Clamping (LSC)

Performance assessment of ultrathin sapphire wafer polishing with layer stacked clamping (LSC) method

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