Evaluation of Electroplated Co-P Film as Diffusion Barrier Between In-48Sn Solder and SiC-Dispersed Bi2Te3 Thermoelectric Material

Li, Siyang; Yang, Di; Tan, Qing; Li, Liangliang

doi:10.1007/s11664-015-3642-7

Cited by 14 publications

(9 citation statements)

References 39 publications

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“…Figure 1D‐F shows the numerical results of the TE couple at T h = 500 K, T c = 300 K, and h a = 0. Here, the solder layer between the semiconductors and copper electrodes is omitted because its thickness is quite small 44 . Besides, the thermal conductivity and electric conductivity of solder materials are close to those of electrode materials (ie, copper), and the electric resistance of the solder layer and electrodes is approximately one‐thousandth of that of the TE legs.…”

Section: Comprehensive Analysis Of a Conventional π‐Type Te Couplementioning

confidence: 99%

Parametric study of asymmetric thermoelectric devices for power generation

Luo

Wang

et al. 2020

Int J Energy Res

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Summary Thermoelectric devices are considered a promising technique for recycling waste heat. In the present work, a three‐dimensional numerical model is developed to study the output performance of thermoelectric devices. A comprehensive analysis is performed based on a conventional π‐type thermoelectric couple. The results indicate that the maximum power of thermoelectric devices generally increases with a decrease in height and an increase in cross‐sectional area; the maximum efficiency exhibits the opposite trends. The best way to reduce heat losses is by using ceramic plates with higher thermal conductivity. Moreover, the parasitic internal resistance exists in the thermoelements, and its influencing factors are studied. To minimize electric losses, an asymmetric structure is proposed for thermoelectric devices. The results exhibit that the optimal cross‐sectional area ratio of the p‐type and n‐type legs (Sp/Sn) is mainly contingent upon the thermoelectric material parameters; the greater the differences in the parameters of p‐type and n‐type thermoelectric materials, the greater the gains provided by the asymmetric structure. Furthermore, the experimental data present great consistency with the numerical results. The research results may help guide the design of thermoelectric devices with relatively lower power losses.

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Section: Comprehensive Analysis Of a Conventional π‐Type Te Couplementioning

confidence: 99%

Parametric study of asymmetric thermoelectric devices for power generation

Luo

Wang

et al. 2020

Int J Energy Res

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“…In addition to the metal Ni and Co, metallic thin films, including Pd, Pt, binary Ni-7 at% V and ternary Ta-Si-N, are effective diffusion barriers for Bi 2 Te 3 -based modules [34]. Among them, the ternary Ta-Si-N (100 nm in thickness) successfully prevents the out-diffusion of constituent elements in Bi 2 Te 3, , and acts as effective diffusion barrier layer [34].…”

Section: Diffusion Barrier In Bi 2 Te 3 -Based Modulesmentioning

confidence: 99%

“…Among them, the ternary Ta-Si-N (100 nm in thickness) successfully prevents the out-diffusion of constituent elements in Bi 2 Te 3, , and acts as effective diffusion barrier layer [34].…”

Section: Diffusion Barrier In Bi 2 Te 3 -Based Modulesmentioning

confidence: 99%

Interfacial reactions in thermoelectric modules

Wei

et al. 2018

Materials Research Letters

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Engineering transport properties of thermoelectric (TE) materials leads to incessantly breakthroughs in the zT values. Nevertheless, modular design holds a key factor to advance the TE technology. Herein, we discuss the structures of TE module and illustrate the inter-diffusions across the interface of constituent layers. For Bi 2 Te 3 -based module, soldering is the primary bonding method, giving rise to the investigations on the selections of solder, diffusion barrier layer and electrode. For midtemperature PbTe-based TE module, hot-pressing or spark plasma sintering are alternative bonding approaches; the inter-diffusions between the diffusion barrier layer, electrode and TE substrate are addressed as well. ARTICLE HISTORY

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“…CoSn, CoSn 2 , and CoSn 3 IMCs have been observed in various Co/Sn solder joints [27][28][29][30][31][32][33][34][35][36]. CoSn 3 appears most frequently at the interface of Co/Sn joints, and it has a strong impact on the shear strength of the joints [5,27,[30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Co-based UBM has attracted considerable interest because of slow interfacial reaction between Co-based UBM and solders, large joint strength, good joint reliability, and acceptable wettability [26][27][28][29][30][31][32][33][34][35][36][37][38]. Electroless Co-Ni-P metallization has been studied, and Co-Ni-P has shown a slower consumption rate and better resistance to joint-strength degradation during a long-term thermal aging in comparison with Ni-P [26].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Electroplated Co-P Film as Diffusion Barrier Between In-48Sn Solder and SiC-Dispersed Bi2Te3 Thermoelectric Material

Cited by 14 publications

References 39 publications

Parametric study of asymmetric thermoelectric devices for power generation

Parametric study of asymmetric thermoelectric devices for power generation

Interfacial reactions in thermoelectric modules

Microstructure and morphology of interfacial intermetallic compound CoSn3 in Sn–Pb/Co–P solder joints

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