Evaluation of FinFET RF Building Blocks

This paper analyzes the scaling of LC voltage controlled oscillator (LC-VCO) implemented in advanced planar CMOS technologies. An LC-VCO for GSM applications, has been designed in state-of-the-art 45/40 nm and 32 nm CMOS technologies, exploiting different front- and back-end of line (FEOL/BEOL) options. The designs are compared with each other and with recent literature in terms of power and phase-noise performance

show abstract

Advances in Multi-Gate MOSFET Circuit Design

Fulde¹,

Arnim

Pacha

et al. 2007

2007 14th IEEE International Conference on Electronics, Circuits and Systems

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Evaluation of FinFET RF Building Blocks

Cited by 6 publications

References 1 publication

Assessment of the impact of technology scaling on the performance of LC-VCOs

Assessment of the impact of technology scaling on the performance of LC-VCOs

Assessment of the impact of technology scaling on the performance of LC-VCOs

Advances in Multi-Gate MOSFET Circuit Design

Contact Info

Product

Resources

About