G. Knoblinger scite author profile

A method for the extraction of all four noise parameters of a MOSFET (channel noise, induced gate noise and complex correlation coefficient) based on a description of noise by means of correlation matrices is presented. For the first time values for the gate noise and the correlation coefficient for deep-submicron transistors are reported. Compared to long channel theory an increase of the gate noise up to a factor 30 is observed.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

G. Knoblinger

Low-temperature electron mobility in Trigate SOI MOSFETs

Temperature effects on trigate SOI MOSFETs

A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design

Radiation Dose Effects in Trigate SOI MOS Transistors

RF-Noise of Deep-Submicron MOSFETs: Extraction and Modeling

Contact Info

Product

Resources

About