Low-temperature electron mobility in Trigate SOI MOSFETs

Colinge, Jean–Pierre; Quinn, Aidan J.; Floyd, Liam; Redmond, Gareth; Alderman, J.; Xiong, Wenjing; Cleavelin, C.R.; Schulz, T.; Schruefer, K.; Knoblinger, G.; Patruno, P.

doi:10.1109/led.2005.862691

Cited by 75 publications

(60 citation statements)

References 13 publications

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“…Some dominant oscillations with large V g spacing persist up to 20 K, as marked by the solid arrows. These oscillations are likely due to the singularities in the density of states (DOS) of quantized 1D subbands, similar to the observations in silicon NWs with small diameter [20] and ballistic InAs NWs with short channel length [32] . We also notice some oscillations have smaller spacing in V g (~1 V), these oscillations are similar to the Fabry-Perot interference [50] or conductance fluctuations in mesoscopic devices.…”

Section: Weak Localization In Single Inas Nws With Low Mobilitiessupporting

confidence: 73%

“…Such quantum confined 1D transport is difficult to be observed in other NW systems except in some rare cases (e.g. Ge/Si, Si NWs at very low temperature (T) [19,20] , Si NW with sub-5 nm diameter [21] ). The small m * also leads to a large Bohr radius for excitons (~34 nm) in InAs [22] , making it convenient to study the quantum confinement effect of excitons.…”

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

Gao

2015

Journal of Materials Science & Technology

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Section: Weak Localization In Single Inas Nws With Low Mobilitiessupporting

confidence: 73%

Section: Introductionmentioning

confidence: 96%

InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

Gao

2015

Journal of Materials Science & Technology

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“…Therefore, oscillations of the drain current occur, when the gate voltage is increased. Current oscillations can be observed as a function of gate voltage, when the drain voltage is not significantly larger than the energy separation between sub-bands, which is expressed by "ΔE" divided by the electron charge "q" [15][16][17][18][19].…”

Section: Quantum Effectsmentioning

confidence: 99%

3D Multi-gate Transistors: Concept, Operation, and Fabrication

Shehata¹,

Gaber²,

Naguib³

et al. 2015

JEE

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Abstract:The multi-gate transistors such as Fin-FETs, Tri-gate FETs, and Gate-all-around (GAA) FETs are remarkable breakthrough in the electronic industry. 3D Transistor is taking the place of the conventional 2D planar transistor for many reasons. 3D transistors afford more scalability, energy efficient performance than planar transistors and increase the control on the channel region to reduce the short channel effect, which enables us to extend Moore's law to further extent. In this paper, we will present a review about their structure, operation, types and fabrication.

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“…Em dispositivos de múltiplas portas com dimensões reduzidas ocorre o fenômeno de inversão de volume e com a baixa temperatura e uma tensão de dreno pequena ocorre também a divisão das bandas de energia em sub-bandas unidimensionais [35]. Nestas Este fenômeno pode ser observado como variações mais abruptas nas curvas características de corrente de dreno em função da tensão de porta (ID x VG) [35].…”

Section: Efeitos Da Temperaturaunclassified

“…Nestas Este fenômeno pode ser observado como variações mais abruptas nas curvas características de corrente de dreno em função da tensão de porta (ID x VG) [35].…”

Section: Efeitos Da Temperaturaunclassified

Efeito da radiação em transistores 3D em baixas temperaturas.

Caparroz¹

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2017Este exemplar foi revisado e corrigido em relação à versão original, sob responsabilidade única do autor e com a anuência de seu orientador. Aos meus amigos Alberto, Vinícius, Tatsuo, Ferrari, Caio, Christian, Rangel, Sivieri, Luciano e Katia, por todo o profissionalismo, auxílio e experiência compartilhada e por terem tornado esses dois anos da minha vida mais divertidos e prazerosos. E a todos do Grupo SOI que contribuíram de forma direta ou indireta para o meu crescimento profissional e conclusão deste projeto. ABSTRACTThis master degree's dissertation aims to study the low temperature electrical behavior of tridimensional transistors on insulator (SOI FinFET) under the effects of proton radiation, through experimental methods and numeric simulations. Initially, it was compared the transistors' behavior before and after they have been subjected to proton radiation, at room temperature. This analysis was performed for both p-and nchannel devices, studying how the analog parameters change after the devices are irradiated by protons with approximately 60 MeV energy.The effects of total ionization dose on SOI FinFET devices were studied. These effects are manifested in different, very often opposing ways for nMOS and pMOS transistors. The radiation effects on the subthreshold slope (SS) in pFinFETs, for example, resulted in a switching speed improvement, while the nFinFETs were degraded. Also, the negative shift in the threshold voltage (VT), as most of the oxide trapped charges are positive, made the pMOS transistors more immune to the parasitic current at the second interface, and, again, the nMOS ones had their characteristics degraded.The wide-fin transistors have a bigger oxide area beneath the silicon film, which results in a greater charge buildup. Hence, the parameter degradation was more substantial than for narrow-fin devices. Short-channel transistors are subject to shortchannel effects and showed themselves more susceptible to proton irradiation at the subthreshold region.In addition to the basic parameter analysis, it was done a tradeoff analysis between three analog parameters: the transistor efficiency (gm/ID), the unit gain frequency (fT) and the intrinsic voltage gain (AV). They have been studied as a function of the inversion coefficient (IC), where it was possible to observe the devices' behavior for each inversion regime and, after, the best tradeoff between the parameters, for a given application.At low temperature, it was also observed that while pFinFETs have a better performance when looking at digital parameters VTH and SS after irradiation, nFinFETs showed more immunity to proton radiation when analyzed from their analog parameter with a more stable response to low temperatures.

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Low-temperature electron mobility in Trigate SOI MOSFETs

Cited by 75 publications

References 13 publications

InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

3D Multi-gate Transistors: Concept, Operation, and Fabrication

Efeito da radiação em transistores 3D em baixas temperaturas.

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