Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC–DC Converters

Reusch, David; Strydom, Johan

doi:10.1109/tpel.2014.2364799

Cited by 131 publications

(30 citation statements)

References 14 publications

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“…Other researches have validated the effectiveness of GaN-HEMTs for high switching frequency DC-DC converters [7]- [10], [14]. Also, GaN-HEMTs have been proved more effective than silicon devices in [7], [9]- [11], [13]. However, because of GaN-HEMTs having low gate-tosource threshold voltage V th , low maximum gate-to-source voltage V GSS , and high source-to-drain voltage V SD , it is difficult to drive GaN-HEMTs.…”

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 97%

“…Additionally, GaN-HEMTs have no source-todrain recovery charge [19] and low package inductance because of small package size [20]. Other researches have validated the effectiveness of GaN-HEMTs for high switching frequency DC-DC converters [7]- [10], [14]. Also, GaN-HEMTs have been proved more effective than silicon devices in [7], [9]- [11], [13].…”

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

“…In this research, current-mode resonant DC-DC converter topology featuring ZVS of primary-side switches at turn-on is adopted. Many studies of this circuit topology in MHz level switching operation have been done [7], [10], [14]. [4], [5], [7]- [17].…”

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

“…For effective miniaturization of the converter, the miniaturization of resonant inductance is important. Meanwhile, to reduce the switching loss, the current-mode resonant DC-DC converter is widely used [7], [10], [12]- [17], [22], [23]. Generally, the current-mode resonant DC-DC converter is controlled by PFM control which varies switching frequency.…”

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

See 3 more Smart Citations

Five-Megahertz PWM-Controlled Current-Mode Resonant DC–DC Step-Down Converter Using GaN-HEMTs

Hariya

Matsuura

Yanagi

et al. 2015

IEEE Trans. on Ind. Applicat.

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High power efficiency and high power density are required in regulated isolated DC-DC converters. In this paper, a novel pulse width modulation (PWM) control method which is suitable for the isolated current-mode resonant DC-DC converter operated at MHz level switching frequency is proposed. The output voltage with the proposed method can be regulated with no additional components at fixed switching frequency. In addition, zero voltage switching (ZVS) of primaryside switches at turn-on can be maintained. The principle of the proposed method and the method of ZVS operation in the proposed method are explained. Some experiments have been performed with a 5MHz isolated step-down DC-DC converter using Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs); the output voltage is 12V and the total volume of the circuit is 16.14cm 3 . With the proposed PWM control method, input voltage range is 42-45.5V, and maximum load current range is 10A at V i = 45.5V. The ZVS of the primary-side switches at turn-on is confirmed in all experimental regions, and the maximum power efficiency is 89.2%.

show abstract

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 97%

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

Section: The Approach Of the Realization Of Dc-dc Converter Operamentioning

confidence: 99%

See 2 more Smart Citations

Five-Megahertz PWM-Controlled Current-Mode Resonant DC–DC Step-Down Converter Using GaN-HEMTs

Hariya

Matsuura

Yanagi

et al. 2015

IEEE Trans. on Ind. Applicat.

View full text Add to dashboard Cite

show abstract

“…Recently, the development of SiC/GaN semiconductor power devices has made it possible to operate with higher frequency (100 kHz and over). [4][5][6] Both P h and P e rapidly increase with the operation frequency. Therefore, it is necessary to use magnetic core materials with P h and P e that are as small as possible for high frequency operation.…”

mentioning

confidence: 99%

Core loss and magnetic susceptibility of superparamagnetic Fe nanoparticle assembly

2016

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Toroidal-shaped high-density Fe nanoparticle assemblies (FNAs) were fabricated by molding different sized Fe nanoparticles (NPs), and the effect of the magnetic behavior of the FNAs on the core loss and the magnetic susceptibility was investigated. An FNA with 4.3 nm diameter Fe NPs exhibits superparamagnetism at room temperature while an FNA with 6.4 nm diameter Fe NPs doesn’t exhibit superparamagnetism at room temperature. AC magnetization curves at 1, 10 and 100 kHz were measured to evaluate the core loss of the toroidal-shaped FNAs. Both FNAs exhibited no significant eddy current loss, which suggests that surfactants on the NP surface effectively act to electrically insulate the NPs, and the NPs are not sintered together when the FNAs are molded. The AC magnetization curves had no hysteresis for the FNA with 4.3 nm diameter Fe NPs, i.e., the core loss was minimal for the superparamagnetic FNA. The magnetic susceptibility of the superparamagnetic FNA with 4.3 nm Fe NPs was 12 times higher than that estimated from Langevin theory due to the effect of strong magnetic dipole interaction. These results suggest that the superparamagnetic FNA has potential as a magnetic core material that exhibits low core loss and high magnetic susceptibility, even at high frequency.

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Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

et al. 2019

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Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC–DC Converters

Cited by 131 publications

References 14 publications

Five-Megahertz PWM-Controlled Current-Mode Resonant DC–DC Step-Down Converter Using GaN-HEMTs

Five-Megahertz PWM-Controlled Current-Mode Resonant DC–DC Step-Down Converter Using GaN-HEMTs

Core loss and magnetic susceptibility of superparamagnetic Fe nanoparticle assembly

Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

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