Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

Kang, Jae-Wook; Mitsuhashi, Takuaki; Kuroda, Kensuke; Okido, Masazumi

doi:10.1007/s10800-019-01327-w

Cited by 6 publications

(12 citation statements)

References 41 publications

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“…Their exploration has continued because of their potential to enable low-cost device application solutions. These techniques include reactive sputtering [51], thermal atomic layer deposition (ALD) [52], pulsed-laser deposition (PLD) [53], activated reactive evaporation (ARE) [54], and electrochemical solution syntheses [55]. Prabaswara et al [51] highlighted the technique of magnetron sputter epitaxy, which is a variant of reactive sputter deposition and a subset of the physical vapor deposition method.…”

Section: Materials Propertiesmentioning

confidence: 99%

“…Biju et al [54] reported a modified ARE method based on nitrogen plasmas and gallium evaporation that can be used to grow polycrystalline films. Kang et al [55] further demonstrated the electrochemical deposition of GaN on silicon using an aqueous solution that contained Ga(NO 3 ) 3 and NH 4 NO 3 . These examples further elucidate the motivation of the community to explore alternative deposition techniques for LED and non-LED applications and the direction towards low-cost, scalable production.…”

Section: Materials Propertiesmentioning

confidence: 99%

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Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

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Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

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Section: Materials Propertiesmentioning

confidence: 99%

Section: Materials Propertiesmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

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“…All the electrochemical depositions are performed using a potentiostat (Hokuto Denko, HA3003A) in a three-electrode cell configuration at atmospheric pressure and temperature of 25˚C. As shown by the E-pH diagram of Ga in Figure 1(a) [49], gallium ion (Ga 3+ ) exists in the form of passivated gallium oxide were obtained at this current density [50]. The working and counter electrodes are separated by a distance of approximately 1.0 cm, and the electrolyte is vigorously stirred during the electrodeposition process.…”

Section: Electrodeposition Processmentioning

confidence: 99%

Effect of Heat Treatment of Al Substrate on GaN Film Electrodeposited in Aqueous Solution

Kang¹,

Kuroda²,

Okido³

2020

JSEMAT

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Most reports on the fabrication of high-quality Gallium nitride (GaN) are typically based on physical techniques that require very expensive equipment. Therefore, the electrodeposition was adopted and examined to develop a simple and economical method for GaN synthesis. GaN films are synthesized on aluminum substrates that are heat-treated at various temperatures using a low-cost and low-temperature electrochemical deposition technique. The electrochemical behavior of source ions in aqueous solutions is examined by cyclic voltammetry (CV). In the solution at pH 1.5 containing 0.1M Ga(NO 3 ) 3 , 2.5 M NH 4 NO 3 and 0.6 M H 3 BO 3 , reduction of gallium and nitrate ions are observed in CV. The presence of hexagonal GaN and gallium oxide (Ga 2 O 3 ) phases is detected for the films deposited on Al substrates at −3.5 mA•cm -2 for 3 h. The energy dispersive X-ray and mapping results reveal that Ga, O, and N coexist in these films. Raman analysis shows hexagonal GaN formation on Al substrates. The changes in the morphology and preferred orientation of GaN were found, which was caused by the reactivity of aluminum surface and the aluminum oxide layer formed by the heat treatment.

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“…Geniş yasak enerji aralığına (Eg) sahip yarıiletkenler (Eg> 3 eV) güç elektroniği uygulamaları açısından üstün özelliklere sahiptir ve bu uygulamalar için gelecek vaat etmektedir (Higashiwaki,2017;Mochalov L, 2020). Galyum tabanlı yarıiletkenler (GaN, Ga2O3) yüksek enerji aralıkları ve yüksek anahtarlama gerilimleri nedeniyle yarıiletken teknolojisi uygulamalarında popüler olmuşlardır (Saron, 2021;Altuntaş, 2014;Kang, 2019).…”

Section: Introductionunclassified

“…(Roy, 2005) Bu çalışmada, elektrodepozisyon çözeltisi farklı oranlardaki galyum nitrat tuzu (Ga(NO3)3xH2O), amonyum nitrat tuzu (NH4NO3) ve deiyonize suyun karıştırılmasıyla hazırlanmıştır ve elektrodepozisyon işlemi oda sıcaklığında gerçekleştirilerek GaN filmler Si ve SnO2 alttaşlar üzerine kaplanmıştır. Bu konu üzerine yapılan diğer çalışmalarda ise üretilen filmin yapısında Galyum, Nitrojen ve Oksijen (GaxOyNz) olduğu rapor edilmiştir (Kang, 2019). Aynı çalışmada, elektrodepozisyon işlemi esnasında elektrotlara sürülen akım yoğunluğu değerine göre Galyum ve Nitrojen arasında bağlanmanın olmadığı ve üretilen filmde Ga2O3 fazlarının baskın olabileceği belirtilmiştir (Kang, 2019).…”

Section: Introductionunclassified

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

Birgi

2022

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Bu çalışmada, GaxOyNz yarıiletken materyal LED grubu aydınlatması altında elektrodepozisyon tekniği kullanılarak p-Si (100) üzerine biriktirilmiştir. Galyum Nitrat, Amonyum Nitrat ve deiyonize su karışımı kullanılarak elektrolit çözeltisi hazırlanmıştır. Platin levha ve p-Si sırasıyla anot ve katot olarak kullanılmıştır. GaxOyNz/p-Si aygıt yapısının üretim aşamasından sonra, 20-100 oC aralığında 10 oC adımlarla sıcaklığa bağımlı Akım-Gerilim (I-V) ölçümleri alınarak iki boyutlu arayüzey durum yoğunluğu dağılımı analizi yapılmıştır. Yapılan analizler sonucunda GaxOyNz/p-Si aygıt yapısının doğrultucu diyot özelliği sergilediği görülmüştür.

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Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

Cited by 6 publications

References 41 publications

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Effect of Heat Treatment of Al Substrate on GaN Film Electrodeposited in Aqueous Solution

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

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