Evaluation of High-Voltage 4H-SiC Gate Turn-off Thyristor for Pulsed Power Application

Liang, Shiwei; Guo, Jiaqi; Liu, Hangzhi; Wang, Daming

doi:10.1109/peas53589.2021.9628884

Cited by 3 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This would indicate that both increasing the dc‐link voltage and enhancing the carrier lifetimes, especially for the N base and P base layers, would effectively accelerate the lateral spreading rate of the plasma, and thus make positive effects on improving the extremely current rise period. Pulsed power tests at a wide range of dc‐link voltages are carried out by the use of the homemade SiC GTO [4]. These results are plotted in Figure 10.…”

Section: Discussion On Extremely Slow Current Rise Transientmentioning

confidence: 99%

“…However, several problems hinder the development of SiC GTO specifically for the pulse power applications. Firstly, the tested pulsed current waveforms of high‐voltage SiC GTO thyristors from both our homemade one and those fabricated by Cree Inc. have confirmed that there is one extremely slow current rise process during the initial current pulse stage, which greatly degrades the turn‐on performance and generates a large gap from the expected di/dt , but this phenomenon has been inadvertently ignored by researchers till now (see Figure 1) [4, 14, 15]. Secondly, the current crowding phenomenon during the turn‐on transient has greatly threatened the high‐stress robustness and long‐term reliability of SiC GTO under repetitive pulsed current conditions [16, 17].…”

Section: Introductionmentioning

confidence: 91%

“…Specific details regarding material parameters of SiC, physical models used for the numerical simulation, and the corresponding parameters can be referred to References [19] and [25]. For the integrated multi-cell structure, the Gate contact-Anode contact distance, the width of Gate contact, and Anode mesa of each cell are subsequently defined according to the technology information provided in References [4,[7][8][9][10]19], yielding an identical cell pitch of 48 µm. Thus, the lateral length of the multi-cell simulation structure is 480 µm.…”

Section: Tcad Simulation Setupmentioning

confidence: 99%

“…10 × higher critical electric field, 3 × higher thermal conductivity and much lower intrinsic carrier concentration compared to Silicon (Si)), the blocking voltage of a single device can be easily designed to be > 10 kV when applying the concept of GTO to SiC, and the physical limits of changing rate of voltage and current can be easily broken through [1,2]. This will make SiC GTO regarded as a promising option for next-generation high-voltage power elec-tronic applications, such as high-voltage direct current (HVDC) transmission, smart grid, and pulsed current forming systems [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Without optimized edge termination techniques, SiC GTO has been faced with large degradation of blocking voltage in the early stage. This situation has been ended up since both high-quality thick SiC epitaxial layer and appropriate junction-edge-terminations were available [1,[4][5][6][7]. Up to date, SiC GTO with a blocking voltage of 9 to 22 kV have been successfully developed, and there are continuous efforts made with the main focus on improving electrical performance of GTO and enhancing its reliability [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Liu,

Liang,

Zhou

et al. 2024

IET Power Electronics

Self Cite

View full text Add to dashboard Cite

Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity over the chip device. In this paper, a practical integrated multi‐cell simulation is performed to physically characterize the turn‐on transient of SiC GTO thyristor. Through examining electrical coupling between adjacent cells caused by both parasitics of electrode metallization and carrier travelling via SiC, the current distributions are observed, and the carrier transport dynamics are analyzed in detail. Furthermore, physical mechanisms dominating the current heterogeneity among multi‐cells are discovered in depth. It is revealed that the current heterogeneity during the turn‐on transient is primarily resulted from the Gate signal delay caused by the Gate Runner metallization, and the lateral interaction from adjacent semiconductor regions adds to this inhomogeneity; however, this situation can be improved once the electrical distance between each Anode contact and the Anode electrode gets lowered. Design method for turn‐on performance improvement is also proposed accordingly. Besides, based on the analysis conducted on the multi‐cell simulation results, the possible reason of the extremely slow current rise transient phase is speculated and experimentally verified. The improvement in the comprehension of SiC GTO's turn‐on transient, which cannot be obtained from the traditional investigation from the viewpoint of one elementary cell, will provide guiding principles helping in directing future efforts to advance the improvement of device design technology.

show abstract

Section: Discussion On Extremely Slow Current Rise Transientmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 91%

Section: Tcad Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Liu,

Liang,

Zhou

et al. 2024

IET Power Electronics

Self Cite

View full text Add to dashboard Cite

show abstract

Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient

Liu

Wang

Liang

et al. 2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Active Disturbance Rejection Control of Full-Bridge DC–DC Converter for a Pulse Power Supply with Controllable Charging Time

Kang,

2023

Electronics

View full text Add to dashboard Cite

In this paper, a control method of a full-bridge DC–DC converter for a pulse power supply with controllable charging time based on Active Disturbance Rejection Control (ADRC) is presented. For this application, the scheme objective is to achieve a flexible charging current to adjust the charging time of the pulse power supply. Due to the existence of switching devices in the system, the dynamic characteristics of the control system are complicated; an LADRC (Linear Active Disturbance Rejection Control) controller is constructed to regulate the charging of the converter current so as to improve the flexibility and dynamic performance of high-voltage pulse power supply. LADRC linearizes the extended state observer and links its parameters to the observer bandwidth to simplify the design of ESO. The proportional coefficient or differential coefficient is connected with the bandwidth of the controller to simplify its tuning, simplify the nonlinear function, more parameters, and complicated adjustment of the ADRC in practical application. The inner loop current regulator assembled is beneficial to the dynamic performance of the loop. The resulting double closed-loop structure improves steady-state and transient current-tracking performance. In addition, stability analysis of the proposed strategy is also performed. The proposed control approach is compared with PI. To verify the feasibility of the proposed scheme, an experimental prototype was constructed and tested to confirm the superiority of the proposed method in terms of dynamic performance.

show abstract

Evaluation of High-Voltage 4H-SiC Gate Turn-off Thyristor for Pulsed Power Application

Cited by 3 publications

References 11 publications

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient

Active Disturbance Rejection Control of Full-Bridge DC–DC Converter for a Pulse Power Supply with Controllable Charging Time

Contact Info

Product

Resources

About