Evaluation of manganite films on silicon for uncooled bolometric applications

Choudhary, R. J.; Ogale, Anjali S.; Shinde, S. R.; Hullavarad, Shiva S.; Ogale, S. B.; Venkatesan, T.; Bathe, Ravi; Patil, S. I.; Kumar, Ravi

doi:10.1063/1.1748837

Cited by 59 publications

(23 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The grainboundary MR generally increases with decreasing temperature [20,22]. Hence, in films that have local epitaxial growth or that are partially c-axis oriented, the MR-T curve has contributions from both, the MR due to the suppression of spin fluctuations by an external magnetic field as well as the grain-boundary MR. Another property important from the application point of view is the temperature coefficient of resistivity (TCR) defined as (1/ρ) (dρ/dT) [23][24][25]. Most of the bolometric materials being used (e.g., vanadium oxide) have TCR ∼ 4% around room temperature [23].…”

Section: Resultsmentioning

confidence: 99%

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Prasad

Singh

Prellier

et al. 2009

Physica Status Solidi (b)

View full text Add to dashboard Cite

We report a comparative study of the magnetoelectrical properties of epitaxial and polycrystalline thin films of lightly doped manganite La0.88Sr0.12MnO3 (LSMO). The LSMO thin films are deposited on single‐crystal LaAlO3 (LAO/(100)) and yttria‐stabilized ZrO2 (ZO/(100)) substrates by on‐axis DC magnetron sputtering from high‐density targets prepared by a wet chemical route. Films deposited on LAO (6 nm and 35 nm thick) are epitaxial and AFM investigations show clean surface morphology. In contrast, films on ZO (20 nm and 35 nm) are polycrystalline. Small variation in grain size is seen in the surface morphology of films on ZO. Both 6 nm and 35 nm thick films on LAO show sharp I–M transitions around the TC with TIM being 275 K and 285 K, respectively. The TIM of films on ZO is drastically suppressed as compared to the same for films on LAO. The large enhancement in TC and hence TIM of LSMO films on LAO has been explained in terms of the compressive strain arising due to the mismatch between the lattice parameters of LAO and LSMO. The absence of such strain in LSMO films on ZO accounts for the lower TIM values. The LSMO/LAO films also show large magnetoresistance only in the vicinity of the TIM and it decreases strongly on lowering and increasing the temperature. In contrast, the LSMO/ ZO films show relatively lower MR spreading over a wider temperature range. The electrical transport of all the films, both in the PM as well as the FM regions have been analyzed in the framework of several models and the suitability of each model has been discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Resultsmentioning

confidence: 99%

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Prasad

Singh

Prellier

et al. 2009

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…However, the manganite films have been shown to exhibit a larger TCR but at a temperature much lower than room temperature. 65,66 In the present study, we have calculated the TCR of all the films and the data are plotted in Fig. 9.…”

Section: -7mentioning

confidence: 99%

Thickness dependent transport properties of compressively strained La0.88Sr0.12MnO3 ultrathin films

Prasad

Singh

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Thickness dependent magnetic and transport properties of compressively strained La 0.88 Sr 0.12 MnO 3 thin films grown on single crystalline SrTiO 3 ͑100͒ substrates have been studied. All films exhibit a large enhancement of ϳ130 K in T C / T IM as compared to that of the bulk target ͑T C ϳ 175 K͒. This has been explained in terms of suppression of the cooperative Jahn-Teller distortion due to in-plane compressive strain. The T C / T IM of the 5 nm film is 315 K/318 K and slightly increases for film thicknesses Յ25 nm. At higher film thicknesses, ϳ60 nm, the T C / T IM starts decreasing. At T Ͼ T IM , the electrical transport is due to thermally activated hopping of small polarons. The activation energy is found to be sensitive to film thickness and shows a minimum at around L ϳ 15-25 nm, which corresponds to the maximum of T C / T IM . All films possess large magnetoresistances ͑MRs͒ in the vicinity of room temperature. Low as well as high field MRs are observed to nearly double as the film thickness increases from 5 nm ͑MRϳ 28% / 3 T͒ to 60 nm ͑MR% ϳ 50% / 3 T͒. Thicker films ͑L Ն 25 nm͒ are found to exhibit sufficiently large temperature coefficients of resistivities, ϳ4% -5% / K, which could be suitable for bolometric applications.

show abstract

“…The most remarkable feature of these manganites is the colossal magneto-resistance (CMR) effect observed around the metal-insulator transition temperature (T MI ) and the ferromagnetic paramagnetic transition temperature (T C ) [3][4][5][6][7][8]. These manganites can be used in many technological applications as magnetic recording devices, magnetic sensors and bolometers [9][10][11][12]. For highly sensitive temperature sensors such as the bolometer, significant electrical signals need to be generated with a small temperature variation, which in turn requires the materials to have a large temperature coefficient of resistance (TCR, which is defined as 1/q[(d(q)/dT)] 9 100 %) near the room temperature [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Search for high temperature coefficient of resistance La2/3Ca1/3MnO3 polycrystalline ceramics

Cai

Cui

et al. 2014

Appl. Phys. A

View full text Add to dashboard Cite

La 2/3 Ca 1/3 MnO 3 polycrystalline ceramics were synthesized by sol-gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T MI (273 K) for the sample sintered at 1,450°C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La 0.67 Ca 0.33 MnO 3 samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La 0.67 Ca 0.33 MnO 3 material are due to its improved microstructure and homogeneity.

show abstract

Evaluation of manganite films on silicon for uncooled bolometric applications

Cited by 59 publications

References 22 publications

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Thickness dependent transport properties of compressively strained La0.88Sr0.12MnO3 ultrathin films

Search for high temperature coefficient of resistance La2/3Ca1/3MnO3 polycrystalline ceramics

Contact Info

Product

Resources

About

Evaluation of manganite films on silicon for uncooled bolometric applications

Cited by 59 publications

References 22 publications

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La0.88Sr0.12MnO3 thin films

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La0.88Sr0.12MnO3 thin films

Thickness dependent transport properties of compressively strained La0.88Sr0.12MnO3 ultrathin films

Search for high temperature coefficient of resistance La2/3Ca1/3MnO3 polycrystalline ceramics

Contact Info

Product

Resources

About

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films